MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:09+ D/C:TO-
IR1175, IR1175S, IR1176 Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: 09+
D/C: TO-
Description: IC DRIVER SYNC 5V 4A 20-DIP
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Datasheet: IR1175
File Size: 164602 KB
Manufacturer: IRF [International Rectifier]
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Datasheet: IR110BG12DCB
File Size: 56571 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IR1176
File Size: 427760 KB
Manufacturer: IRF [International Rectifier]
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| Technical/Catalog Information | IR1175 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | Low-Side |
| Voltage - Supply | 4 V ~ 5.5 V |
| Current - Peak | 2A |
| Delay Time | - |
| Package / Case | 20-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 2 |
| Operating Temperature | -40°C ~ 85°C |
| High Side Voltage - Max (Bootstrap) | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR1175 IR1175 |
The IR1175 is a high speed CMOS controller designed to drive N-channel power MOSFETs used as synchronous rectifiers in high current, high frequency forward converters with output voltages equal or below 5VDC. Schmitt trigger inputs with double pulse suppression allow the controller to operate in noisy environments. The circuit does not require any ties to the primary side and derives its operating power directly from the secondary. The circuit functions by anticipating transformer output transitions, then turns the power MOSFETs on or off before the transitions of the transformer to minimize body drain diode conduction and reduce associated losses. Turn on/off lead time can be adjusted to accommodate a variety of power MOSFET sizes and circuit conditions. The IR1175 also provides gate drive overlap/dead-time control via external components to further minimize diode conduction by nulling effects of secondary loop and device package inductance.
| Symbol | Definition | Min. | Max. | Units |
| Vdd | Supply voltage | - | 7 | VDC |
| Iin | Input clamp current | - | +/- 10 | mADC |
| PD | Power dissipation (SSOP-20) | - | 400 | mW |
| RthJC | Thermal resistance (SSOP-20) junction-to-case | - | 28.5 | /W |
| RthJA | Thermal resistance (SSOP-20) junction-to-ambient | - | 90.5 | /W |
| TJ | Junction temperature | - | 150 | |
| TS | Storage temperature | -55 | 150 | |
| TL | Lead temperature (soldering, 10 seconds) | - | 300 |
| Technical/Catalog Information | IR1175S |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | Low-Side |
| Voltage - Supply | 4 V ~ 5.5 V |
| Current - Peak | 2A |
| Delay Time | - |
| Package / Case | 20-SSOP |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 2 |
| Operating Temperature | -40°C ~ 85°C |
| High Side Voltage - Max (Bootstrap) | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR1175S IR1175S |
| Technical/Catalog Information | IR1176 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | Low-Side |
| Voltage - Supply | 4 V ~ 5.25 V |
| Current - Peak | 4A |
| Delay Time | - |
| Package / Case | 20-DIP |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 2 |
| Operating Temperature | -40°C ~ 85°C |
| High Side Voltage - Max (Bootstrap) | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR1176 IR1176 |
The IR1176 is a high speed CMOS controller designed to drive N-channel power MOSFETs used as synchronous rectifiers in high current, high frequency forward converters with output voltages equal or below 5VDC. Schmitt trigger inputs with double pulse suppression allow the controller to operate in noisy environments. The circuit does not require any ties to the primary side and derives its operating power directly from the secondary. The circuit functions by anticipating transformer output transitions, then turns the power MOSFETs on or off before the transitions of the transformer to minimize body drain diode conduction and reduce associated losses. Turn on/off lead time can be adjusted to accommodate a variety of power MOSFET sizes and circuit conditions. The IR1176 also provides gate drive overlap/dead-time control via external components to further minimize diode conduction by nulling effects of secondary loop and device package inductance.
| Symbol | Definition | Min. | Max. | Units | |
| Vdd | Supply voltage | - | 7 | VDC | |
| Iin | Input clamp current | - | +/- 10 | mADC | |
| PD | Power dissipation | (SSOP-20) | - | 400 | mW |
| (SOIC) | - | - | - | ||
| (PDIP) | - | - | - | ||
| RthJC | Thermal resistance | (SSOP-20) junction-to-case | - | 28.5 | /W |
| (SOIC) junction-to-case | 20 | ||||
| (PDIP) junction-to-case | 28.1 | ||||
| RthJA | Thermal resistance (SSOP-20) junction-to-ambient | - | 90.5 | ||
| (SOIC) junction-to-ambient | 45 | ||||
| (PDIP) junction-to-ambient | 62.4 | ||||
| TJ | Junction temperature | - | 150 | ||
| TS | Storage temperature | -55 | 150 | ||
| TL | Lead temperature (soldering, 10 seconds) | - | 300 | ||
• Provides constant and proper gate drive to power MOSFETs regardless of transformer output
• Minimizes loss due to power MOSFET body drain diode conduction
• Stand alone operation - no ties to primary side
• Schmitt trigger input with double pulse suppression allows operation in noisy environments
• High peak current drive capability - 4A
• High speed operation - 2MHz
• Adaptable to multiple topologies
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