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Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF1302PBF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130
IDM
Pulsed Drain Current
700
PD @TC = 25°C
Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
VGS
Diode Maximum Forward Current
± 20
V
EAS
Single Pulse Avalanche Energy
350
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
TBD
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRF1302PBF Features
· Advanced Process Technology · Ultra Low On-Resistance · Dynamic dv/dt Rating · 175°C Operating Temperature · Fast Switching · Repetitive Avalanche Allowed up to Tjmax · Lead-Free
IRF1302S Parameters
Technical/Catalog Information
IRF1302S
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
174A
Rds On (Max) @ Id, Vgs
4 mOhm @ 104A, 10V
Input Capacitance (Ciss) @ Vds
3600pF @ 25V
Power - Max
200W
Packaging
Tube
Gate Charge (Qg) @ Vgs
120nC @ 10V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IRF1302S IRF1302S
IRF1302S General Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF1302S Maximum Ratings
Parameter
Max.
Units
ID @ TC =25
Continuous Drain Current,VGS @ 10V
174
A
ID @ TC =100
Continuous Drain Current,VGS @ 10V
120
IDM
Pulsed Drain Current
700
PD @ TC =25
Power Dissipation
200
W
Linear Derating Factor
1.4
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
350
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
TBD
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRF1302S Features
`Advanced Process Technology `Ultra Low On-Resistance `Dynamic dv/dt Rating `175 Operating Temperatur `Fast Switching `Repetitive Avalanche Allowed up to Tjmax