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IRF5NJ5305, IRF5NJ540, IRF5NJ6215

IRF5NJ5305, IRF5NJ540, IRF5NJ6215 Selling Leads, Datasheet

MFG:IR  Package Cooled:SMD-0.5  D/C:00+

IRF5NJ5305, IRF5NJ540, IRF5NJ6215 Picture

IRF5NJ5305, IRF5NJ540, IRF5NJ6215 Datasheet download

Five Points

Part Number: IRF5NJ5305

 

MFG: IR

Package Cooled: SMD-0.5

D/C: 00+

 

 

 
 
 
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IRF5NJ5305 Suppliers

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  • IRF5NJ5305

  • Vendor: IR Pack: SMD D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)
  • IRF034

  • Vendor: IR Pack: TO D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)

About IRF5NJ5305

PDF/DataSheet Download

Datasheet: IRF5NJ5305

File Size: 121851 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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IRF5NJ540 Suppliers

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  • IRF5NJ540

  • Vendor: IR Pack: SMD D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)
  • IRF034

  • Vendor: IR Pack: TO D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)

About IRF5NJ540

PDF/DataSheet Download

Datasheet: IRF5NJ540

File Size: 118225 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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IRF5NJ6215 Suppliers

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  • IRF5NJ6215

  • Vendor: IR Pack: SMD D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)
  • IRF034

  • Vendor: IR Pack: TO D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-03-28
  • Inquire Now
  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
    (0)

About IRF5NJ6215

PDF/DataSheet Download

Datasheet: IRF5NJ6215

File Size: 119388 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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Related Part Number

IRF5NJ5305 General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

IRF5NJ5305 Maximum Ratings

Parameter
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
-22*
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
-16
IDM Pulsed Drain Current
-88
PD @TC = 25 Max. Power Dissipation
75
W
Linear Derating Factor0
0.6
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
160
mJ
IAR Avalanche Current
-16
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
2.8
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
Lead Temperature
300 ( for 5s)
Weight
1.0(Typical)
g
* Current is limited by package

IRF5NJ5305 Features

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight

IRF5NJ540 General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

IRF5NJ540 Maximum Ratings

Parameter
Units
ID @ VGS = 10V,TC = 25 Continuous Drain Current
22*
A
ID @ VGS = 10V,TC = 100 Continuous Drain Current
16
IDM Pulsed Drain Current
88
PD @TC = 25 Max. Power Dissipation
75
W
Linear Derating Factor
0.60
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
200
mJ
IAR Avalanche Current
16
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
4.1
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
Lead Temperature
300 ( for 5s)
Weight
10
g
* Current is limited by package

IRF5NJ540 Features

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight

IRF5NJ6215 General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

IRF5NJ6215 Maximum Ratings

  Parameter  
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
-11
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
-7.2
IDM Pulsed Drain Current
-44
PD @TC = 25 Max. Power Dissipation
75
W
  Linear Derating Factor0
0.6
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
130
mJ
IAR Avalanche Current
-11
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
10
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
  Lead Temperature
300 ( for 5s)
  Weight
1.0 (Typical)
g

IRF5NJ6215 Features

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight

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