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IRF7416PbF is a kind of SMPS MOSFET.Here you can get some information about the features.First is Generation V technology.The second is ultra low on-resistance.The third one is P-Channel Mosfet.The fourth one is surface mount.The fifth is available in Tape and Reel.The sixth is dynamic dv/dt rating.The last one is fast switching. The following is about the absolute maximum ratings.The maximum ID (continuous drain current) is -10 A at TA=25,VGS=-10 V and -7.1 A at TA=70,VGS=-10 V.The maximum IDM (pulsed drain current) is -45 A.The maximum VGS (gate-to-source voltage) is ±20 V.The maximum PD (power dissipation) is 2.5 W at TA=25.The TJ and TSTG (operating junction and storage temperature range) are both from -55 to +150.The soldering temperature for 10 seconds is 300.The maximum dv/dt (peak diode recovery dv/dt) is -5.0 V/ns.The EAS (single pulse avalanche energy) is 370 mJ.Then is about the thermal resistance.The maximum RJA (Junction-to-Ambient ) is 50/W. There are the static electrical characteristics at TJ=25.The minimum V(BR)DSS (drain-to-source breakdown voltage) is -30 V at VGS=0 V,ID=-250A.The typical V(BR)DSS/TJ (breakdown voltage temperature coefficient) is -0.024 V/ at reference to 25 and ID=-1 mA.The minimum VGS(th) (gate threshold voltage) is -1.0 V at VDS=VGS,ID=-250A.The minimum gfs (gate threshold voltage) is 5.6 S at VDS=-10 V,ID=-2.8 A.The maximum IDSS (drain to source leakage current) is -1.0A at VDS=-24 V,VGS=0 V and is -2.5A at VDS=-24 V,VGS=0 V,TJ=125.The maximum (IGSS) (gate-to-source forward current) is 100 nA at VGS=30 V.The maximum (IGSS) (gate-to-source forward leakage) is -100 nA at VGS=-20 V and the (IGSS) (gate-to-source reverse leakage) is 100 nA at VGS=20 V.