MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:03+
IRFB4210, IRFB4215PBF, IRFB4227PBF BID 5-7 DAYS 22590 IR 2008+ - Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-220
D/C: 03+
Description: MOSFET N-CH 60V 115A TO-220AB
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRFB4215PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 115A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 54A, 10V |
| Input Capacitance (Ciss) @ Vds | 4080pF @ 25V |
| Power - Max | 270W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4215PBF IRFB4215PBF |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
| Parameter | Max. | Units | |
| ID @ VGS = 12V, TC = 25 ID @ VGS = 12V, TC = 100 IDM |
Continuous Drain Current VGS @ 10V Continuous Drain Current VGS @ 10V Pulsed Drain Current |
115 81 360 |
A |
| PD @ TC = 25 | Max. Power Dissipation | 270 | W |
| Linear Derating Factor | 1.8 | W/ | |
| VGS IAR |
Gate-to-Source Voltage Avalanche Current |
±20 85 |
V A |
| EAR dv/dt |
Repetitive Avalanche Energy Peak Diode Recovery dv/dt |
18 4.7 |
mJ V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +175 |
|
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
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