IRFI650B, IRFI654B, IRFI664G Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
IRFI650B, IRFI654B, IRFI664G Datasheet download
Part Number: IRFI650B
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
IRFI650B, IRFI654B, IRFI664G
- Table of contents:
Info of IRFI650B
Info of IRFI654B
Info of IRFI664G
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About IRFI650B
PDF/DataSheet Download
Datasheet: IRFI650B
File Size: 689442 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRFI654B
PDF/DataSheet Download
Datasheet: IRFI654B
File Size: 686827 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFI650B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
IRFI650B Maximum Ratings
| Symbol | Parameter | IRFW610B / IRFI610B | Unit | |
|
VDSS |
Drain-Source Voltage |
200 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
28 |
A | |
|
17.7 |
A | |||
| TDM |
Drain Current - Pulsed (Note 1) |
112 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 600 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
28 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
156 |
W | ||
|
1.25 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
||
IRFI650B Features
• 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFI654B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
IRFI654B Maximum Ratings
| Symbol | Parameter | IRFW654B / IRFI654B | Unit | |
|
VDSS |
Drain-Source Voltage |
250 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
21 |
A | |
|
13.3 |
A | |||
| IDM |
Drain Current - Pulsed (Note 1) |
84 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 700 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
21 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
156 |
W | ||
|
1.25 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
||
IRFI654B Features
• 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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