IRFI840A, IRFI840A/B, IRFI840B Selling Leads, Datasheet
MFG:FSC Package Cooled:TO-220 D/C:T0-262
IRFI840A, IRFI840A/B, IRFI840B Datasheet download
Part Number: IRFI840A
MFG: FSC
Package Cooled: TO-220
D/C: T0-262
IRFI840A, IRFI840A/B, IRFI840B
- Table of contents:
Info of IRFI840A
Info of IRFI840A/B
Info of IRFI840B
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRFI840B
PDF/DataSheet Download
Datasheet: IRFI840B
File Size: 711802 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
IRFI840B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.
IRFI840B Maximum Ratings
| Symbol | Parameter | IRFW840B / IRFI840B | Unit | |
|
VDSS |
Drain-Source Voltage |
500 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
8.0 |
A | |
|
5.1 |
A | |||
| IDM |
Drain Current - Pulsed (Note 1) |
32 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 320 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
8.0 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
13.4 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
134 |
W | ||
|
1.08 |
W/℃ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
℃ | |
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
℃ | |
IRFI840B Features
• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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