MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:05+
Info of IRFIZ34GPBF | Info of IRFIZ34N | Info of IRFIZ34NPBF
MFG: IR D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY 
Tel: 86-755-23956340
Adddate: 2010-03-11
MFG: ST Qty: 5000 Note: ECRAI@MSN.COM
HitSem International Electronics Company Limited 
Tel: 86-755-61329020
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
MFG: IR D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY 
Tel: 86-755-23956340
Adddate: 2010-03-11
MFG: IR Package Cooled: 1,800
Tel: 65-6333-9155
Adddate: 2010-03-11
MFG: IR D/C: 06+ Qty: 1,000 Note: 04 OEM STK
Contact: Mr.simonzhu
Tel: 86-755-83803182
Adddate: 2010-03-11
Contact: Mr.JuJim/king/ZhuChuquan
Tel: +86-0755-83341067
Adddate: 2010-03-11
MFG: ST Qty: 5000 Note: ECRAI@MSN.COM
HitSem International Electronics Company Limited 
Tel: 86-755-61329020
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-11
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
MFG: IR Package Cooled: TO-220 D/C: 09+ Qty: 39000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-11
MFG: ir Package Cooled: ir D/C: dc0422 Qty: 18
Asia World Trade Technology Source 
Tel: 086-0755-25573524
Adddate: 2010-03-11
MFG: I Package Cooled: 18280 D/C: TO-220F
Tel: 86-755-83958497
Adddate: 2010-03-11
MFG: IR Package Cooled: 9800 D/C: TO
Tel: 86-755-83958497
Adddate: 2010-03-11
MFG: IR Package Cooled: 07+ D/C: TO-220F Qty: 5000 Note: New & Original/stock
SHENZHEN MINGJIADA ELECTRONICS CO.,LTD 
Tel: 86-0755-83957301
Adddate: 2010-03-11
MFG: IR Package Cooled: TO-220 Qty: 1020 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-11
MFG: IR Package Cooled: TO-220 FullPak (Iso) D/C: `06+(pb-free) Qty: 6983 Note: new in stock
Contact: Ms.Melody Chen/Julie Chen
Tel: 86-755-82535765
Adddate: 2010-03-11
MFG: I Package Cooled: 03+ D/C: TO-220F Qty: 28000
Tel: 86-755-8279-1230
Adddate: 2010-03-11
PDF/DataSheet Download
Datasheet: IRFIZ34N
File Size: 107719 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRFIZ34GPbF has 7 features.The 1st one is dynamic dv/dt rating.The 2nd one is isolated package.The 3rd one is that the high voltage isolation is 2.5KVRMS.The 4th one is 175℃ operating temperature.The 5th one is sink to lead creepage dist.=4.8mm.The 6th one is that the device provedes a low thermal resistance.The last one is lead-free.
The IRFIZ34GPbF has some absolute maximum ratings.The maximum of continuous drain current is 20A at TC=25℃ when VGS@-10V.The maximum of continuous drain current is 14A at TC=100℃ when VGS@-10V.The maximum of pulsed drain current is 80A.The maximun of power dissipation is 42W at TC=25℃.The maximum of linear dereting factor is 0.28W/℃.The maximum of gate-to-source voltage is within ±20V.The maximum of single pulse avalanche energy is 300mJ.The maximum of peak diode recovery dv/dt is 5.0V/ns.The maximum of soldering temperature is 300℃(1.6mm from case) for 10 seconds.The operating junction and storage temperature range both are from -55 to +175℃.
The following is about part of the electrical characteristics of IRFIZ34GPbF.The minimum of drain-to-source breakdown voltage is 60V under the condition of VGS=0V and ID=250μA.The typical of breakdown voltage temp.coefficient is 0.065V/℃ under the condition of reference to 25℃ and ID=1mA.The maximum of static drain-to-source on-resistance is 0.050Ω under the condition of VGS=10V and ID=12A.The minimum of gate threshold voltage is 2.0V while the maximum of it is 4.0V under the condition of VDS=VGS and ID=250μA.The minimum of forward transconductance is 9.2S under the condition of VDS=25V and ID=12A.The maximum of drain-to-source leakage current is 25μA under the condition of VDS=60V and VGS=0V.The maximum of drain-to-source leakage current is 250μA under the condition of VDS=48V,VGS=0V and TJ=150℃.The maximum of gate-to-source forward leakage is -100nA under the condition of VGS=-20V.The maximum of gate-to-source forward leakage is 100nA under the condition of VGS=20V.
| Technical/Catalog Information | IRFIZ34N |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 37W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Package / Case | TO-220-5 Fullpak (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFIZ34N IRFIZ34N |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 21 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 15 | |
| IDM | Pulsed Drain Current ①⑥ | 100 | |
| PD @TC = 25°C | Power Dissipation | 37 | W |
| Linear Derating Factor | 0.24 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy②⑥ | 110 | mJ |
| IAR | Avalanche Current①⑥ | 16 | A |
| EAR | Repetitive Avalanche Energy① | 3.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③⑥ | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | ℃ |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFIZ34NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 37W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFIZ34NPBF IRFIZ34NPBF |