MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:20000
IRFR1010ZPBF, IRFR1010ZTRPBF BID 5-7 DAYS 2000 IR 2008+ -, IRFR1025 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: 2009+ROHS
D/C: 20000
Description: MOSFET N-CH 55V 42A DPAK
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRFR1010ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 42A, 10V |
| Input Capacitance (Ciss) @ Vds | 2840pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR1010ZPBF IRFR1010ZPBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V (Silicon Limited) |
91 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
65 | |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V (Package Limited) |
42 | |
|
IDM |
Pulsed Drain Current |
360 | |
|
PD @ TC = 25 |
Power Dissipation |
140 |
W |
| Linear Derating Factor |
0.9 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
110 |
mJ |
|
EAS (Tested) |
Single Pulse Avalanche Energy Tested Value |
220 | |
|
IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ | |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
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