Package Cooled:08+ D/C:5000
Package Cooled: 08+
D/C: 5000
MFG: VISHAY Package Cooled: N/A D/C: 08+ Qty: 2000
HongGuangShengYe Electronics Co., Ltd. 
Tel: 86-755-83040460
Adddate: 2010-03-21
MFG: IR Package Cooled: to251 D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY 
Tel: 86-755-23956340
Adddate: 2010-03-21
MFG: IR D/C: 06+ Qty: 5950 Note: 1-2 days
Tel: 86-027-86966790
Adddate: 2010-03-21
MFG: VISHAY Package Cooled: 08+ D/C: 5000 Qty: TO-251 Note: PB FREE
Overseas Electronics Industrial Co., LTD 
Tel: 86-755-83211917
Adddate: 2010-03-21
MFG: VISHAY Package Cooled: 08+ D/C: 5000 Qty: TO-251 Note: 原装无铅
S<ECHNOLOGY DEVELOPMENT CO., LIMITED 
Contact: Mr.曾志良
Tel: 86-755-83002733
Adddate: 2010-03-21
Qty: 33900
Contact: Ms.YolandaHU
Tel: 086-0755-83279898 ext.1087
Adddate: 2010-03-21
MFG: ST Qty: 5000 Note: ECRAI@MSN.COM
HitSem International Electronics Company Limited 
Tel: 86-755-61329020
Adddate: 2010-03-21
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
MFG: IR Package Cooled: TO-251 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-21
MFG: IR D/C: 02+ Qty: 254
Tel: 86-754-84462235
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 06+ Qty: 49950
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 06+ Qty: 50000 Note: in stock
Overseas Electronics Development Co.,Ltd 
Contact: Mr.Yixin
Tel: 86-0755-82078820
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 05+ Qty: 50000 Note: New in orginal, stock offer.
WEIHAO ELECTRONICS (H.K) CO., LIMITED 
Contact: Mr.minkinZhou
Tel: 0086-755-82736887
Adddate: 2010-03-21
Qty: 1000PCS
Tel: 86-0-13689526114
Adddate: 2010-03-21
MFG: IR Package Cooled: 05+/06+ D/C: 12000 Qty: TO-251
Tel: 86-0755-83610826
Adddate: 2010-03-21
MFG: IR D/C: 05+ Qty: 2322
Tel: 86-754-84462235
Adddate: 2010-03-21
PDF/DataSheet Download
Datasheet: IRFU48Z
File Size: 341128 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
MFG: FAIRCHILD Package Cooled: TO-251 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-21
MFG: IR D/C: 01+ Qty: 2322
Tel: 86-754-84462235
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 06+ Qty: 49950
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-21
MFG: IR Qty: 55000
Tel: 86-755-28536689
Adddate: 2010-03-21
MFG: FSC Package Cooled: TO-251 D/C: 09+ Qty: 14000
SHENZHEN ZHENGRUN ELECTRONICS CO., LTD. 
Tel: 86-755-82724686
Adddate: 2010-03-21
MFG: IR Package Cooled: TO-251 D/C: 06+ Qty: 50000 Note: in stock
Overseas Electronics Development Co.,Ltd 
Contact: Mr.Yixin
Tel: 86-0755-82078820
Adddate: 2010-03-21
Qty: 55000
Tel: 86-755-28536689
Adddate: 2010-03-21
PDF/DataSheet Download
Datasheet: IRFU430B
File Size: 690561 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.5 |
A |
|
2.2 |
A | ||
|
IDM |
Drain Current - Pulsed |
14 |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
270 |
mJ |
|
IAR |
Avalanche Current |
3.5 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
|
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
48 |
W | |
|
0.38 |
W/°C | ||
|
TJ,Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
• 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 62 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 44 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
| IDM | Pulsed Drain Current ① | 250 | |
| PD @TC = 25°C | Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy② | 74 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value⑥ |
110 | |
| IAR | Avalanche Current① | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy⑤ | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | ℃ |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf·in (1.1N·m) |
•Advanced Process Technology
•Ultra Low On-Resistance
•175°C Operating Temperature
•Fast Switching
•Repetitive Avalanche Allowed up to Tjmax