IRGPC30U, IRGPC30UD2, IRGPC40 Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:TO
IRGPC30U, IRGPC30UD2, IRGPC40 Datasheet download
Part Number: IRGPC30U
MFG: IR
Package Cooled: N/A
D/C: TO
IRGPC30U, IRGPC30UD2, IRGPC40
- Table of contents:
Info of IRGPC30U
Info of IRGPC30UD2
Info of IRGPC40
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About IRGPC30U
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Datasheet: IRGPC30U
File Size: 98174 KB
Manufacturer:
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About IRGPC30UD2
PDF/DataSheet Download
Datasheet: IRGPC30UD2
File Size: 429655 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPC40F
PDF/DataSheet Download
Datasheet: IRGPC40F
File Size: 109794 KB
Manufacturer:
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IRGPC30U General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPC30U Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
23 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
12 | |
| ICM | Pulsed Collector Current |
92 | |
| ILM | Clamped Inductive Load Current |
92 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
10 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
IRGPC30U Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGPC30UD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
IRGPC30UD2 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
23 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
12 | |
| ICM | Pulsed Collector Current |
92 | |
| ILM | Clamped Inductive Load Current |
92 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
12 | |
| IFM | Diode Maximum Forward Current |
92 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf•in (1.1 N•m) |
IRGPC30UD2 Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
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