MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:D-pak D/C:06+
IRLR3105PBF, IRLR3110Z, IRLR3110ZTRPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: D-pak
D/C: 06+
Description: MOSFET N-CH 100V 42A DPAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLR3105PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 37 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
| Power - Max | 57W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR3105PBF IRLR3105PBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 25 | A |
| ID @ VGS = 12V, TC =100 | Continuous Drain Current | 18 | |
| IDM | Pulsed Drain Current | 100 | |
| PD @ TC = 25 | Max. Power Dissipation | 57 | W |
| Linear Derating Factor | 0.38 | W/ | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 61 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 94 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 3.4 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6 mm from case ) |
| Technical/Catalog Information | IRLR3110ZTRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 38A, 10V |
| Input Capacitance (Ciss) @ Vds | 3980pF @ 25V |
| Power - Max | 140W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 48nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR3110ZTRPBF IRLR3110ZTRPBF |
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