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IRLW620A, IRLW630A, IRLW640

Table of contents:
Info of IRLW620A
Info of IRLW630A
Info of IRLW640

IRLW620A, IRLW630A, IRLW640 Selling Leads, Datasheet

MFG:仙童 Package Cooled:TO-263 D/C:TO-

IRLW620A, IRLW630A, IRLW640 Datasheet download

Five Points

Part Number: IRLW620A

MFG: 仙童

Package Cooled: TO-263

D/C: TO-

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

IRLW620A Quality Suppliers:

Aslan Internatinal Trade Co., Limited

Contact: Mr.David King
Tel: 86-754-84420881
Adddate: 2010-07-31
(854)

IRLW630A Quality Suppliers:

Section Yida Electronics (HK) Co.,Limited

Contact: Ms.joe
Tel: 852-8135-7827
Adddate: 2010-07-31
(606)

IRLW640 Quality Supplier:

Aslan Internatinal Trade Co., Limited

Contact: Mr.David King
Tel: 86-754-84420881
Adddate: 2010-07-31
(854)

IRLW620A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	200	V
I_D	Continuous Drain Current (T_C=25°C)	3.3	A
I_D	Continuous Drain Current (T_C=100°C)	2.1	A
I_DM	Drain Current-Pulsed (1)	12	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (2)	29	mJ
I_AR	Avalanche Current (1)	3.3	A
E_AR	Repetitive Avalanche Energy (1)	3.3	mJ
dv/dt	Peak Diode Recovery dv/dt (3)	5	V/ns
P_D	Total Power Dissipation (T_A=25°C)*	3.1	W
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	33 0.26	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

IRLW620A Features

◆ Avalanche Rugged Technology
◆ Rugged Gate Oxide Technology
◆ Lower Input Capacitance
◆Improved Gate Charge
◆ Extended Safe Operating Area
◆ 150°C Operating Temperature
◆ Lower Leakage Current: 10mA (Max.) @ V_DS = 200V
◆ Lower R_DS(ON): 0.609W (Typ.)

IRLW630A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	200	V
I_D	Continuous Drain Current (T_C=25°C)	9	A
I_D	Continuous Drain Current (T_C=100°C)	5.7	A
I_DM	Drain Current-Pulsed (1)	32	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (2)	54	mJ
I_AR	Avalanche Current (1)	9	A
E_AR	Repetitive Avalanche Energy (1)	6.9	mJ
dv/dt	Peak Diode Recovery dv/dt (3)	5	V/ns
P_D	Total Power Dissipation (T_A=25°C)*	3.1	W
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	69 0.55	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

IRLW630A Features

◆ Avalanche Rugged Technology
◆ Rugged Gate Oxide Technology
◆ Lower Input Capacitance
◆ Improved Gate Charge
◆ Extended Safe Operating Area
◆150°C Operating Temperature
◆ Lower Leakage Current: 10mA (Max.) @ V_DS = 200V
◆ Lower R_DS(ON): 0.335W (Typ.)

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IRLW620A, IRLW630A, IRLW640