IS61LV12816, IS61LV12816-, IS61LV12816 15T Selling Leads, Datasheet
MFG:ISSI Package Cooled:TSSOP D/C:02+
IS61LV12816, IS61LV12816-, IS61LV12816 15T Datasheet download
Part Number: IS61LV12816
MFG: ISSI
Package Cooled: TSSOP
D/C: 02+
MFG:ISSI Package Cooled:TSSOP D/C:02+
IS61LV12816, IS61LV12816-, IS61LV12816 15T Datasheet download
MFG: ISSI
Package Cooled: TSSOP
D/C: 02+
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PDF/DataSheet Download
Datasheet: IS61LV12816
File Size: 90822 KB
Manufacturer: ICSI [Integrated Circuit Solution Inc]
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PDF/DataSheet Download
Datasheet: IS61LV12816-10B
File Size: 150468 KB
Manufacturer: ISSI [Integrated Silicon Solution, Inc]
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PDF/DataSheet Download
Datasheet: IS604
File Size: 52381 KB
Manufacturer: ISOCOM
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The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm).
Symbol | Parameter |
Value |
Unit |
VCC | Power Supply Voltage Relative to GND |
0.5 to +5.0 |
V |
VTERM | Terminal Voltage with Respect to GND |
0.5 to VCC +0.5 |
V |
TSTG | Storage Temperature |
65 to +150 |
|
TBIAS | Temperature Under Bias: Com. Ind. |
10 to + 85 45 to +90 |
|
PT | Power Dissipation |
2.0 |
W |
IOUT | DC Output Current |
±20 |
mA |