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N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
ITS612N1 Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
Vbb
43
V
Supply voltage for full short circuit protection Tj =-40 ...+150
Vbb
34
V
Load dump protection2) VLoadDump = UA + Vs , UA = 13.5 V RI3) = 2, RL = 5.3, td = 200 ms, IN= low or high
VLoaddump4)
60
V
Load current (Short circuit current, see page 5)
IL
self-limited
A
Junction temperature Operating temperature range Storage temperature range
Tj Ta Tstg
+150 -30...+85 -40 ...+105
Power dissipation (DC), TC25
Ptot
36
W
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,Tstart = 150 TC = 150 one channel, IL= 2.3 A, ZL = 89 mH, 0: both channels parallel, IL = 4.4 A, ZL = 47 mH, 0: see diagrams on page 9
EAS
290 580
mJ
Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD
1.0 2.0
kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7
VIN I IN IST
-10 ... +16 ±2.0 ±5.0
V mA
ITS612N1 Features
·Overload protection ·Current limitation ·Short circuit protection ·Thermal shutdown ·Overvoltage protection (including load dump) ·Fast demagnetization of inductive loads ·Reverse battery protection1) ·Undervoltage and overvoltage shutdown with auto-restart and hysteresis ·Open drain diagnostic output ·Open load detection in OFF-state ·CMOS compatible input protection ·Loss of ground and loss of Vbb ·Electrostatic discharge (ESD) protection
ITS612N1 Typical Application
`C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications `All types of resistive, inductive and capacitve loads `Replaces electromechanical relays, fuses and discrete circuits