MFG:Infineon Technologies Category:Integrated Circuits (ICs) Package Cooled:DIP D/C:99+/00+0
ITS70401J, ITS711L1, ITS716G Datasheet download
Category: Integrated Circuits (ICs)
MFG: Infineon Technologies
Package Cooled: DIP
D/C: 99+/00+0
Description: IC SWITCH HISIDE SMART DSO-20
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| Technical/Catalog Information | ITS711L1 |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Package / Case | DSO-20 |
| Mounting Type | Surface Mount |
| Type | High Side |
| Voltage - Supply | 5 V ~ 34 V |
| On-State Resistance | 165 mOhm |
| Current - Output / Channel | 2.9A |
| Current - Peak Output | 7.5A |
| Packaging | Tape & Reel (TR) |
| Input Type | Non-Inverting |
| Number of Outputs | 4 |
| Operating Temperature | -30°C ~ 85°C |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ITS711L1 ITS711L1 |
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
| Parameter | Symbol | Values | Unit |
| Supply voltage (overvoltage protection see page 4) | Vbb | 43 | V |
| Supply voltage for full short circuit protection Tj,start = -40 ...+150 |
Vbb | 34 | V |
| Load current (Short-circuit current, see page 5) | IL | self-limited | A |
| Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 , td = 200 ms; IN = low or high, each channel loaded with RL = 7.1 , |
VLoad dump4) |
60 | V |
| Junction temperature Operating temperature range Storage temperature range |
Tj Ta Tstg |
+150 -30 ... +85 -40 … +105 |
|
| Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: |
Ptot | 3.6 1.9 |
W |
| Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), IL = 1.9 A, ZL = 66 mH, 0 one channel: IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: IL = 4.4 A, ZL = 66 mH, 0 four parallel channels: see diagrams on page 9 and page 10 |
EAS | 150 320 800 |
mJ |
| Electrostatic discharge capability (ESD) (Human Body Model) |
VESD | 1.0 | kV |
| Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 |
VIN IIN IST |
-10 ... +16 ±2.0 ±5.0 |
V mA |
| Thermal resistance junction - soldering point5),6) each channel: junction - ambient5) one channel active: all channels active: |
Rthjs Rthja |
16 44 35 |
K/W |
| Technical/Catalog Information | ITS716G |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Package / Case | DSO-20 |
| Mounting Type | Surface Mount |
| Type | High Side |
| Voltage - Supply | 5.5 V ~ 40 V |
| On-State Resistance | 110 mOhm |
| Current - Output / Channel | 2.6A |
| Current - Peak Output | 9A |
| Packaging | Tape & Reel (TR) |
| Input Type | Non-Inverting |
| Number of Outputs | 4 |
| Operating Temperature | -30°C ~ 85°C |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ITS716G ITS716G |
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions
| Parameter | Symbol | Value | Unit |
| Supply voltage (overvoltage protection see page 6) | Vbb | 43 | V |
| Supply voltage for full short circuit protection Tj,start = -40 ...+150 |
Vbb | 36 | V |
| Load current (Short - circuit current, see page 6) | IL | self limited | A |
| Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 , |
VLoad dump3) | 60 | V |
| Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) |
VIN IIN IIN IST |
-10 ... +16 ±0.3 ±5.0 ±5.0 |
V mA |
| Junction temperature | Tj | 150 | |
| Operating temperature | Ta | -30...+85 | |
| Storage temperature | Tstg | -40 ...+105 | |
| Power dissipation (DC)4) Ta = 25: (all channels active) Ta = 85: |
Ptot | 3.6 1.9 |
W |
| Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 1504), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 one channel: IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels: |
ZL | 1.0 4.0 8.0 |
mH |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF |
VESD | 1.0 4.0 8.0 |
kV |
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
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