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• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions
ITS724G Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage (overvoltage protection see page 6)
Vbb
43
V
Supply voltage for full short circuit protection Tj,start = -40 ...+150
Vbb
36
V
Load current (Short - circuit current, see page 6)
IL
self limited
A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 ,
VLoad dump3)
60
V
Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC)
VIN IIN IIN IST
-10 ... +16 ±0.3 ±5.0 ±5.0
V mA
Junction temperature
Tj
150
Operating temperature
Ta
-30...+85
Storage temperature
Tstg
-40 ...+105
Power dissipation (DC)4) Ta = 25: (all channels active) Ta = 85:
Ptot
3.6 1.9
W
Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 1504), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 one channel: IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels:
ZL
1.0 4.0 8.0
mH
Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
VESD
1.0 4.0 8.0
kV
ITS724G Typical Application
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications • All types of resistive, inductive and capacitve loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits