K4D263238F, K4D263238FF-QC50, K4D263238F-GC36 Selling Leads, Datasheet
MFG:SAMSUNG Package Cooled:QFP D/C:04
K4D263238F, K4D263238FF-QC50, K4D263238F-GC36 Datasheet download
Part Number: K4D263238F
MFG: SAMSUNG
Package Cooled: QFP
D/C: 04
MFG:SAMSUNG Package Cooled:QFP D/C:04
K4D263238F, K4D263238FF-QC50, K4D263238F-GC36 Datasheet download
MFG: SAMSUNG
Package Cooled: QFP
D/C: 04
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PDF/DataSheet Download
Datasheet: K4D263238F
File Size: 243122 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4D261638
File Size: 231302 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4D261638
File Size: 231302 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.5 ~ 3.6 | V |
Voltage on VDD supply relative to Vss | VDD | -1.0 ~ 3.6 | V |
Voltage on VDDQ supply relative to Vss | VDDQ | -0.5 ~ 3.6 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.8 | W |
Short circuit current | IOS | 50 | mA |
Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.