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K4F641612B, K4F641612C, K4F641612C-TC50

Table of contents:
Info of K4F641612B
Info of K4F641612C
Info of K4F641612C-TC50

K4F641612B, K4F641612C, K4F641612C-TC50 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSOP D/C:03+

K4F641612B, K4F641612C, K4F641612C-TC50 Picture

K4F641612B, K4F641612C, K4F641612C-TC50 Datasheet download

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Part Number: K4F641612B

MFG: SAMSUNG

Package Cooled: TSOP

D/C: 03+

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K4F641612B General Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

K4F641612B Maximum Ratings

Parameter	Symbol	Rating	Units
Voltage on any pin relative to V_SS	V_IN,V_OUT	-0.5 to +4.6	V
Voltage on VCC supply relative to V_SS	V_CC	-0.5 to +4.6	V
Storage Temperature	T_stg	-55 to +150	°C
Power Dissipation	P_D	1	W
Short Circuit Output Current	I_OS Address	50	mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

K4F641612B Features

• Part Identification
- K4F661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4F641612B-TC/L(3.3V, 4K Ref., TSOP)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

K4F641612B Connection Diagram

K4F641612C General Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

K4F641612C Maximum Ratings

Parameter	Symbol	Rating	Units
Voltage on any pin relative to V_SS	V_IN,V_OUT	-0.5 to +4.6	V
Voltage on VCC supply relative to V_SS	V_CC	-0.5 to +4.6	V
Storage Temperature	T_stg	-55 to +150	°C
Power Dissipation	P_D	1	W
Short Circuit Output Current	I_OS Address	50	mA

K4F641612C Features

• Part Identification
- K4F661612C-TC/L(3.3V, 8K Ref.)
- K4F641612C-TC/L(3.3V, 4K Ref.)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

K4F641612C Connection Diagram

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