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K4S161622C-TC80, K4S161622D, K4S161622D-60

Table of contents:
Info of K4S161622C-TC80
Info of K4S161622D
Info of K4S161622D-60

K4S161622C-TC80, K4S161622D, K4S161622D-60 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSOP50 D/C:00+

K4S161622C-TC80, K4S161622D, K4S161622D-60 Picture

K4S161622C-TC80, K4S161622D, K4S161622D-60 Datasheet download

Five Points

Part Number: K4S161622C-TC80

MFG: SAMSUNG

Package Cooled: TSOP50

D/C: 00+

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K4S161622D General Description

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

K4S161622D Maximum Ratings

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	V_IN, V_OUT	-1.0 ~ 4.6	V
Voltage on V_DD supply relative to Vss	V_DD ,V_DDQ	-1.0 ~ 4.6	V
Storage temperature	T_STG	-55 ~ +150	°C
Power dissipation	P_D	1.0	W
Short circuit current	I_OS	50	mA

Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

K4S161622D Features

• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual banks operation
• MRS cycle with address key programs
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 15.6us refresh duty cycle (2K/32ms)

K4S161622D Connection Diagram

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