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K4T51163QE, K4T51163QE-2CE6, K4T51163QE-HCE6 US 2-3 DAYS 10000 SAMSUNG - -

K4T51163QE, K4T51163QE-2CE6, K4T51163QE-HCE6 US 2-3 DAYS 10000 SAMSUNG - - Selling Leads, Datasheet

MFG:SAMSUNG  Package Cooled:05+  D/C:09+

K4T51163QE, K4T51163QE-2CE6, K4T51163QE-HCE6 US 2-3 DAYS 10000 SAMSUNG - - Picture

K4T51163QE, K4T51163QE-2CE6, K4T51163QE-HCE6 US 2-3 DAYS 10000 SAMSUNG - - Datasheet download

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Part Number: K4T51163QE

 

MFG: SAMSUNG

Package Cooled: 05+

D/C: 09+

 

 

 
 
 
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  • K4T51163QE-ZCE7

  • Vendor: SAMSUNG  Adddate: 2024-04-23
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  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
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    (5)

About K4T1G044QA

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Datasheet: K4T1G044QA

File Size: 626689 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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K4T51163QE-2CE6 Suppliers

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  • K4T1G044QQ-HCE6

  • Vendor: SAMSUNG  Adddate: 2024-04-23
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    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
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  • K4T1G044QQ-HCE6

  • Vendor: SAMSUNG D/C: 09+& Qty: 20480  Adddate: 2024-04-23
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  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
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  • K4T1G084QE-HCE6

  • Vendor: SAMSUNG  Adddate: 2024-04-23
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  • K4T1G084QE-HCE7

  • Vendor: SAMSUNG D/C: 08+&   Adddate: 2024-04-23
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    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
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  • K4T1G084QE-HCF7

  • Vendor: SAMSUNG D/C: 09+& Qty: 10000  Adddate: 2024-04-23
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  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About K4T1G044QA

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Datasheet: K4T1G044QA

File Size: 626689 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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K4T51163QE-HCE6 US 2-3 DAYS 10000 SAMSUNG - - Suppliers

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  • K4T1G044QQ-HCE6

  • Vendor: SAMSUNG  Adddate: 2024-04-23
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  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
    Fax:
    (5)
  • K4T1G044QQ-HCE6

  • Vendor: SAMSUNG D/C: 09+& Qty: 20480  Adddate: 2024-04-23
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)
  • K4T1G084QE-HCE6

  • Vendor: SAMSUNG  Adddate: 2024-04-23
  • Inquire Now
  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
    Fax:
    (5)
  • K4T1G084QE-HCE7

  • Vendor: SAMSUNG D/C: 08+&   Adddate: 2024-04-23
  • Inquire Now
  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
    Fax:
    (5)
  • K4T1G084QE-HCF7

  • Vendor: SAMSUNG D/C: 09+& Qty: 10000  Adddate: 2024-04-23
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About K4T1G044QA

PDF/DataSheet Download

Datasheet: K4T1G044QA

File Size: 626689 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

Download : Click here to Download

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Related Part Number

K4T51163QE General Description

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata- rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 512Mb(x4) device receive 14/11/2 addressing.

The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.

The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).

K4T51163QE Maximum Ratings

Symbol Parameter Rating Units Notes
VDD Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1
VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1
VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1
VIN, VOUT Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1
TSTG Storage Temperature -55 to +100 °C 1, 2

K4T51163QE Features

• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/
pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/
sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended datastrobe
is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-PASR(Partial Array Self Refresh)
-50ohm ODT
-High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95 °C
• All of Lead-free products are compliant for RoHS

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