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K4T51163QE-ZCF7, K4T51163QG-HCE6, K4T51163QG-HCE7

Table of contents:
Info of K4T51163QE-ZCF7
Info of K4T51163QG-HCE6
Info of K4T51163QG-HCE7

K4T51163QE-ZCF7, K4T51163QG-HCE6, K4T51163QG-HCE7 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:BGA D/C:07+

K4T51163QE-ZCF7, K4T51163QG-HCE6, K4T51163QG-HCE7 Picture

K4T51163QE-ZCF7, K4T51163QG-HCE6, K4T51163QG-HCE7 Datasheet download

Five Points

Part Number: K4T51163QE-ZCF7

MFG: SAMSUNG

Package Cooled: BGA

D/C: 07+

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K4T51163QG-HCE7 General Description

The K4T51163QG-HCE7 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*16 I/Os*4 banks device. The device operates with a single 1.8 V±0.1 V power supply and 1.8 V±0.1 VDDQ. It is available in 84ball FBGAs(*16).

There are some features as follows. (1) JEDEC standard 1.8 V ± 0.1 V power supply; (2) programmable CAS latency: 3, 4, 5, 6; (3) programmable additive latency: 0, 1 , 2 , 3, 4 , 5; (4) burst length: 4, 8 (interleave/nibble sequential); (5) programmable sequential/interleave burst mode; (6) bi-directional differential data-strobe (single-ended datastrobe is an optional feature); (7) off-chip driver(OCD) impedance adjustment; (8) on die termination; (9) average refresh period 7.8us at lower than TCASE 85, 3.9us at 85< TCASE < 95; (10) all of products are lead-free, halogen-free, and RoHS compliant.

The following is about the absolute maximum ratings. (1): VDD (voltage on VDD pin relative to VSS) is from -1.0 to +2.3 V; (2): VDDQ (voltage on VDDQ pin relative to VSS) is from -0.5 to +2.3 V; (3): VDDL (voltage on VDDL pin relative to VSS) is from -0.5 to +2.3 V; (4): VIN, VOUT (voltage on any pin relative to VSS) is from -0.5 to 2.3 V; (5) TSTG (storage temperature) is from -55 to +100; (5) TOPER (operating temperature) is from 0 to +95.

K4T51163QG-HCE7 Connection Diagram

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