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K6T4008C18-GB70, K6T4008C1B, K6T4008C1B-55

Table of contents:
Info of K6T4008C18-GB70
Info of K6T4008C1B
Info of K6T4008C1B-55

K6T4008C18-GB70, K6T4008C1B, K6T4008C1B-55 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:SOP D/C:07+

K6T4008C18-GB70, K6T4008C1B, K6T4008C1B-55 Picture

K6T4008C18-GB70, K6T4008C1B, K6T4008C1B-55 Datasheet download

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Part Number: K6T4008C18-GB70

MFG: SAMSUNG

Package Cooled: SOP

D/C: 07+

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K6T4008C1B General Description

The K6T4008C1B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.

K6T4008C1B Maximum Ratings

Item	Symbol	Ratings	Unit	Remark
Voltage on any pin relative to Vss	V_IN,V_OUT	-0.5 to 7.0	V	-
Voltage on Vcc supply relative to Vss	V_CC	-0.5 to 7.0	V	-
Power Dissipation	P_D	1.0	W	-
Storage temperature	T_STG	-65 to 150	°C	-
Operating Temperature	T_A	0 to 70	°C	K6T4008C1B-L/-B
Operating Temperature	T_A	-40 to 85	°C	K6T4008C1B-P/-F
Soldering temperature and time	T_SOLDER	260°C, 10sec(Lead Only)	-	-

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K6T4008C1B Features

· Process Technology: TFT
· Organization: 512Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/R

K6T4008C1B Connection Diagram

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