K7N163601A, K7N163601A-FC13, K7N163601AHC16000 Selling Leads, Datasheet
MFG:n/a Package Cooled:n/a D/C:04+
K7N163601A, K7N163601A-FC13, K7N163601AHC16000 Datasheet download
Part Number: K7N163601A
MFG: n/a
Package Cooled: n/a
D/C: 04+
K7N163601A, K7N163601A-FC13, K7N163601AHC16000
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Info of K7N163601A
Info of K7N163601A-FC13
Info of K7N163601AHC16000
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About K7N163601A-Q(F)C(I)13
PDF/DataSheet Download
Datasheet: K7N163601A-Q(F)C(I)13
File Size: 286017 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
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About K7N04FM
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Datasheet: K7N04FM
File Size: 172872 KB
Manufacturer: STMicro
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About K7N04FM
PDF/DataSheet Download
Datasheet: K7N04FM
File Size: 172872 KB
Manufacturer: STMicro
Download : Click here to Download
K7N163601A General Description
The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied "High or Low".Asynchronous inputs include the sleep mode enable(ZZ).Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals.For read cycles,pipelined SRAM output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock.
The K7N163601A and K7N161801A are implemented with SAMSUNG¢s high performance CMOS technology and is available in 100pin TQFP and 165FBGA packages. Multiple power and ground pins minimize ground bounce.
K7N163601A Maximum Ratings
| PARAMETER | SYMBOL | RATING | UNIT | |
| Voltage on VDD Supply Relative to VSS | VDD | -0.3 to 4.6 | V | |
| Voltage on Input Pin Relative to VSS | VIN | -0.3 to VDD+0.3 | V | |
| Power Dissipation | PD | 1.6 | W | |
| Storage Temperature | TSTG | -65 to 150 | °C | |
| Operating Temperature | Commercial | TOPR | 0 to 70 | °C |
| Industrial | -40 to 85 | |||
| Storage Temperature Range Under Bias | TBIAS | -10 to 85 | °C | |
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.
K7N163601A Features
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no da tacontention.
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• 165FBGA(11x15 ball aray) with body size of 13mmx15mm.
• Operating in commeical and industrial temperature range.
K7N163601A Connection Diagram
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