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K9F2808U0B-YCBO, K9F2808U0B-YIB0, K9F2808U0C

Table of contents:
Info of K9F2808U0B-YCBO
Info of K9F2808U0B-YIB0
Info of K9F2808U0C

K9F2808U0B-YCBO, K9F2808U0B-YIB0, K9F2808U0C Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSOP28 D/C:09+

K9F2808U0B-YCBO, K9F2808U0B-YIB0, K9F2808U0C Picture

K9F2808U0B-YCBO, K9F2808U0B-YIB0, K9F2808U0C Datasheet download

Five Points

Part Number: K9F2808U0B-YCBO

MFG: SAMSUNG

Package Cooled: TSOP28

D/C: 09+

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K9F2808U0C General Description

Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2808U0C's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F2808U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F2808U0C Maximum Ratings

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to VSS		V_IN/OUT	-0.6 to + 4.6	V
		V_CC	-0.6 to + 4.6
		V_CCQ	-0.6 to + 4.6
Temperature Under Bias	K9F2808U0C-XCB0	T_BIAS	-10 to +125	°C
	K9F2808U0C-XIB0		-40 to +125
Storage Temperature	K9F2808U0C-XCB0	T_STG	-65 to +150	°C
	K9F2808U0C-XIB0
Short Circuit Current		I_os	5	mA

K9F2808U0C Features

• Voltage Supply : 2.7 ~ 3.6 V
• Organization
    - Memory Cell Array
    -(16M + 512K)bit x 8bit
    - Data Register
    - (512 + 16)bit x 8bit
• Automatic Program and Erase
    - Page Program
    -(512 + 16)Byte
    - Block Erase :
    - (16K + 512)Byte
• Page Read Operation
    - Page Size
    - (512 + 16)Byte
    - Random Access : 10s(Max.)
    - Serial Page Access : 50ns(Min.) 16M x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
    - Program time : 200s(Typ.)
    - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
    - K9F2808U0C-YCB0/YIB0 48
    - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F2808U0C-PCB0/PIB0 48
    - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
    - K9F2808U0C-VCB0/VIB0 48
    - Pin WSOP I (12X17X0.7mm)
    - K9F2808U0C-FCB0/FIB0 48
    - Pin WSOP I (12X17X0.7mm) - Pb-free Package
   - K9F2808U0C-V/F(WSOPI ) is the same device as K9F2808U0C-Y/P(TSOP1) except package type.

K9F2808U0C Connection Diagram

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