KM416S1021C, KM416S1021CT, KM416S1021CT-G8 Selling Leads, Datasheet
MFG:SAMSUNG Package Cooled:TSSOP D/C:07+
KM416S1021C, KM416S1021CT, KM416S1021CT-G8 Datasheet download
Part Number: KM416S1021C
MFG: SAMSUNG
Package Cooled: TSSOP
D/C: 07+
MFG:SAMSUNG Package Cooled:TSSOP D/C:07+
KM416S1021C, KM416S1021CT, KM416S1021CT-G8 Datasheet download
MFG: SAMSUNG
Package Cooled: TSSOP
D/C: 07+
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PDF/DataSheet Download
Datasheet: KM416S1021C
File Size: 84272 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: KM416S1021CT-G7
File Size: 84272 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: KM416S1021CT-G8
File Size: 84272 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
The KM416S1021C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -1.0 ~ 4.6 | V |
Voltage on VDD supply relative to VSS | VDD, VDDQ | -1.0 ~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.0 | W |
Short circuit current | IOS | 50 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.