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KS-21827L4, KS-21905L1, KS22

KS-21827L4, KS-21905L1, KS22 Selling Leads, Datasheet

MFG:TI  D/C:03+04+

KS-21827L4, KS-21905L1, KS22 Picture

KS-21827L4, KS-21905L1, KS22 Datasheet download

Five Points

Part Number: KS-21827L4

 

MFG: TI

Package Cooled:

D/C: 03+04+

 

 

 
 
 
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KS-21905L1 Suppliers

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KS22 Suppliers

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  • KS22151L2/LS09QQ

  • D/C: 02+& Qty: LATTICE  Adddate: 2024-04-24
  • Inquire Now
  • Action Dynamic   China
    Contact: Ms.AdaHuang   MSN:dn0755@hotmail.com
    Tel: 86-0755-83957495
    Fax: 86-0755-83987630
    (6)

About KS22069BN

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Datasheet: KS22069BN

File Size: 128980 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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KS22 Maximum Ratings

PARAMETER Symbol KS22 KS23 KS24 KS25 KS26 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 V
Maximum RMS Voltage VRWS 14 21 28 35 42 V
Maximum DC Blocki ng Voltage VDC 20 30 40 50 60 V
Maximum Average Forward Current .375" (9.5mm)
lead length at TL=55
IAV 2 A
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method) IFSM 50 A
Maximum Forward Voltage at 1.0A VF 0.5 0.7 V
Maximum DC Reverse Current at TJ=25
Rated DC Blocki ng Voltage TJ=100
IR 0.4
10
mA
Typical Thermal Resistance RJA
RJL
55
17
/ W
Operating junction temperature range TJ -65 to +125 -65 to +150 ns
Storage Temperature Range TSTG -65 to +150
* 1. Pulse test: 300ms pulse width, 1% duty cycle.

KS22 Features

·For surface mounted applications.
·Low profile package.
·Built-in strain relief.
·Metal silicon junction, majority carrier conduction.
·Low power loss, high efficiency.
·High current capability, low forward voltage drop.
·High surge capability

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