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LF442N, LF444, LF444ACN

Table of contents:
Info of LF442N
Info of LF444
Info of LF444ACN

LF442N, LF444, LF444ACN Selling Leads, Datasheet

MFG:NSC Package Cooled:DIP D/C:02+

LF442N, LF444, LF444ACN Datasheet download

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Part Number: LF442N

MFG: NSC

Package Cooled: DIP

D/C: 02+

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LF444 General Description

The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while greatly improving the DC characteristics of the LM148. The amplifier has the same bandwidth, slew rate, and gain (10 kW load) as the LM148 and only draws one fourth the supply current of the LM148. In addition the well matched high voltage JFET input devices of the LF444 reduce the input bias and offset currents by a factor of 10,000 over the LM148. The LF444 also has a very low equivalent input noise voltage for a low power amplifier.

The LF444 is pin compatible with the LM148 allowing an immediate 4 times reduction in power drain in many applications. The LF444 should be used wherever low power dissipation and good electrical characteristics are the major considerations.

LF444 Maximum Ratings

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
                                            LF444A                  LF444
Supply Voltage                   ±22V                     ±18V
Differential Input Voltage    ±38V                     ±30V
Input Voltage Range        ±19V                        ±15V
    (Note 1)
Output Short Circuit    Continuous                  Continuous
    Duration (Note 2)
                                 D Package                   N, M Packages
Power Dissipation         900 mW                       670 mW
    (Notes 3, 9)
Tj max                               150                            115
    /A (Typical)                 100/W                        85/W

LF444 Features

` 1⁄4 supply current of a LM148:    200 A/Amplifier (max)
` Low input bias current:    50 pA (max)
` High gain bandwidth:     1 MHz
` High slew rate:     1 V/s
` Low noise voltage for low power

` Low input noise current

` High input impedance: 10¹²
` High gain V_O = ±10V, R_L= 10k: 50k (min)

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