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The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F008SC-V/SCH-V offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
LH28F008SCH-V Maximum Ratings
Operating Temperature • LH28F008SC-V During Read, Block Erase, Byte Write and Lock-Bit Configuration ........... 0 to +70 (NOTE 1) Temperature under Bias.........................10 to +80 • LH28F008SCH-V During Read, Block Erase, Byte Write and Lock-Bit Configuration ... ...25 to +85 (NOTE 2) Temperature under Bias............. ...........25 to +85 Storage Temperature.............................. 65 to +125 Voltage On Any Pin (except VCC, VPP, and RP#) ...2.0 to +7.0 V (NOTE 3) VCC Supply Voltage................. ...2.0 to +7.0 V (NOTE 3) VPP Update Voltage during Block Erase, Byte Write and Lock-Bit Configuration .. ....2.0 to +14.0 V (NOTE 3, 4) RP# Voltage with Respect to GND during Lock-Bit Configuration Operations.. 2.0 to +14.0 V (NOTE 3, 4) Output Short Circuit Current .............. ....100 mA (NOTE 5)
LH28F008SCH-V Features
• Smart 5 technology 5 V VCC 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 120 ns (5.0±0.5 V) • Enhanced automated suspend options Byte write suspend to read Block erase suspend to byte write Block erase suspend to read • Enhanced data protection features Absolute protection with VPP = GND Flexible block locking Block erase/byte write lockout during power transitions • SRAM-compatible write interface • High-density symmetrically-blocked architecture Sixteen 64 k-byte erasable blocks • Enhanced cycling capability 100 000 block erase cycles 1.6 million block erase cycles/chip • Low power management Deep power-down mode Automatic power saving mode decreases ICC in static mode • Automated byte write and block erase Command user interface Status register • ETOXTM* V nonvolatile flash technology • Packages 40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend 44-pin SOP (SOP044-P-0600) 48-ball CSP (FBGA048-P-0608)