LH28F040SUTD-24, LH28F040SUTD-Z4, LH28F128 Selling Leads, Datasheet
MFG:10000 Package Cooled:SHARP D/C:00+
LH28F040SUTD-24, LH28F040SUTD-Z4, LH28F128 Datasheet download
Part Number: LH28F040SUTD-24
MFG: 10000
Package Cooled: SHARP
D/C: 00+
MFG:10000 Package Cooled:SHARP D/C:00+
LH28F040SUTD-24, LH28F040SUTD-Z4, LH28F128 Datasheet download
MFG: 10000
Package Cooled: SHARP
D/C: 00+
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PDF/DataSheet Download
Datasheet: LH2011
File Size: 871955 KB
Manufacturer: NSC [National Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: LH28F040SUTD-Z4
File Size: 253932 KB
Manufacturer: SHARP [Sharp Electrionic Components]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: LH2011
File Size: 871955 KB
Manufacturer: NSC [National Semiconductor]
Download : Click here to Download
Temperature under bias ...................... -20 to +80
Storage temperature ......................... -65 to +125
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions"may affect device reliability.
• 512K * 8 Bit Configuration
• 5 V Write/Erase Operation (5 V VPP, 3.3 VCC)
VCC for Write/Erase at as low as 2.9 V
• Min. 2.7 V Read Capability
190 ns Maximum Access Time (VCC = 2.7 V)
• 2 Banks Enable the Simultaneous Read/Write/Erase Operation
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Bank Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transitions
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 20 A (Maximum) ICC in CMOS Standby
• State-of-the-Art 0.55 m ETOX™ Flash Technology
• 40-Pin, 1.2 mm * 10 mm * 20 mm TSOP (Type I) Package