M58BWO-16BB80T3ES, M58C630P, M58CR032C Selling Leads, Datasheet
MFG:501 Package Cooled:ST D/C:QFP
M58BWO-16BB80T3ES, M58C630P, M58CR032C Datasheet download
Part Number: M58BWO-16BB80T3ES
MFG: 501
Package Cooled: ST
D/C: QFP
M58BWO-16BB80T3ES, M58C630P, M58CR032C
- Table of contents:
Info of M58BWO-16BB80T3ES
Info of M58C630P
Info of M58CR032C
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About M581
PDF/DataSheet Download
Datasheet: M581
File Size: 112333 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About M581
PDF/DataSheet Download
Datasheet: M581
File Size: 112333 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About M58CR032C
PDF/DataSheet Download
Datasheet: M58CR032C
File Size: 446079 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
M58CR032C Maximum Ratings
| Symbol | Parameter | Value | Unit |
| TA | Ambient Operating Temperature | 40 to 85 | °C |
| TBIAS | Temperature Under Bias | 40 to 125 | °C |
| TSTG | Storage Temperature | 55 to 155 | °C |
| VIO(1) | Input or Output Voltage | 0.5 to VDDQ+0.5 | V |
| VDD,VDDQ | Supply Voltage | 0.5 to 2.7 | V |
| VPP | Program Voltage | 0.5 to 13 | V |
M58CR032C Features
SUPPLY VOLTAGE
VDD= 1.65V to 2V for Program, Erase and Read
VDDQ = 1.65V to 3.3V for I/O Buffers
VPP= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
Burst mode Read: 54MHz
Page mode Read (4 Words Page)
Random Access: 85, 100, 120 ns PROGRAMMING TIME
10µs by Word typical
Double/Quadruple Word programming option MEMORY BLOCKS
Dual Bank Memory Array: 8/24 Mbit
Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
Read in one Bank while Program or Erase in other
No delay between Read and Write operations BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down SECURITY
64 bit user programmable OTP cells
64 bit unique device identifier
One parameter block permanently lockable
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M58CR032C: 88C8h
Bottom Device Code, M58CR032D: 88C9h
VDD= 1.65V to 2V for Program, Erase and Read
VDDQ = 1.65V to 3.3V for I/O Buffers
VPP= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
Burst mode Read: 54MHz
Page mode Read (4 Words Page)
Random Access: 85, 100, 120 ns PROGRAMMING TIME
10µs by Word typical
Double/Quadruple Word programming option MEMORY BLOCKS
Dual Bank Memory Array: 8/24 Mbit
Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
Read in one Bank while Program or Erase in other
No delay between Read and Write operations BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down SECURITY
64 bit user programmable OTP cells
64 bit unique device identifier
One parameter block permanently lockable
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M58CR032C: 88C8h
Bottom Device Code, M58CR032D: 88C9h
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