MAX242WN, MAX242WWN, MAX2430 Selling Leads, Datasheet
MFG:MAX Package Cooled:SOP-18 D/C:SOP/16
MAX242WN, MAX242WWN, MAX2430 Datasheet download

Part Number: MAX242WN
MFG: MAX
Package Cooled: SOP-18
D/C: SOP/16
MFG:MAX Package Cooled:SOP-18 D/C:SOP/16
MAX242WN, MAX242WWN, MAX2430 Datasheet download

MFG: MAX
Package Cooled: SOP-18
D/C: SOP/16
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PDF/DataSheet Download
Datasheet: MAX002
File Size: 42133 KB
Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MAX002
File Size: 42133 KB
Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MAX2430
File Size: 185388 KB
Manufacturer: Maixm
Download : Click here to Download
The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +21dBm (125mW) of output power with greater than 32dB of gain at VCC = 3.6V.
A unique shutdown function provides an off supply current of typically less than 1A to save power during "idle slots" in time-division multiple-access (TDMA) transmissions. An external capacitor sets the RF output power envelope ramp time. External power control is also possible over a 15dB range. The amplifier's input is matched on-chip to 50. The output is an open collector that is easily matched to a 50½ load with few external components.
The MAX2430 is ideal as a driver amplifier for portable and mobile telephone systems, or as a complete power amplifier for other low-cost applications, such as those in the 915MHz spread-spectrum ISM band. It is fabricated with Maxim's high-frequency bipolar transistor process and is available in a thermally enhanced,16-pin narrow SO and miniature 16-pin PwrQSOP packages with heat slug.
VCC1, VCC2 .......................................................................+6V
SHDN, BIAS...................................................-0.3V, (VCC + 0.3V)
RFIN..........................................................................-0.3V, +2V
PRFIN...............................................................................-3dBm
Continuous Power Dissipation (TA = +70°C)
PwrQSOP (derate 20mW/°C above +70°C).................1.6W
Narrow SO (derate 20mW/°C above +70°C) ..............1.6W
Operating Temperature Range .....................-20°C to +85°C
Storage Temperature Range ......................-65°C to +160°C
Lead Temperature (soldering, 10sec) ........................+300°C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

