MBRF10H100, MBRF10H100CT, MBRF10H150CT Selling Leads, Datasheet
MFG:VISHAY Package Cooled:TO-220 D/C:TO
MBRF10H100, MBRF10H100CT, MBRF10H150CT Datasheet download

Part Number: MBRF10H100
MFG: VISHAY
Package Cooled: TO-220
D/C: TO
MFG:VISHAY Package Cooled:TO-220 D/C:TO
MBRF10H100, MBRF10H100CT, MBRF10H150CT Datasheet download

MFG: VISHAY
Package Cooled: TO-220
D/C: TO
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PDF/DataSheet Download
Datasheet: MBRF10H100
File Size: 114880 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MBRF10H100CT
File Size: 87292 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MBRF10H150CT
File Size: 55712 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
| Maximum Ratings (TC= 25°C unless otherwise noted) | ||||
| (TC= 25°C unless otherwise noted)Parameter |
Symbol | MBR10H90 | MBR10H100 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 90 | 100 | V |
Working peak reverse voltage |
VRWM | 90 | 100 | V |
Maximum DC blocking voltage |
VDC | 90 | 100 | V |
Maximum average forward rectified current |
IF(AV) | 10 | A | |
Peak forward surge current |
IFSM | 250 | A | |
| Peak repetitive reverse current at tp= 2µs, 1KHZ |
IRRM | 0.5 | A | |
| Voltage rate of change (rated VR) | dv/dt | 10,000 | V/µs | |
Operating junction and storage temperature range |
TJ, TSTG | 65 to +175 | °C | |
RMS Isolation voltage (MBRF type only) from terminals to |
VISO | L4500(1) 3500(2) 1500(3) |
V | |
| Electrical Characteristics(TC= 25°C unless otherwise noted) | |||
| Parameter | Symbol | Value |
Unit |
Maximum instantaneous at IF =5.0A, TJ = 25°C at IF = 10A, TJ = 125°C |
VF | 0.76 0.61 0.85 0.71 |
V |
| Maximum reverse current per legTJ = 25°C at working peak reverse voltage (Note 4)TJ = 100°C |
IR | 3.5 4.5 |
mA |
| ParameterSymbol | ParameterSymbol | MBR20H90CT | MBR20H100CT | Unit |
| MaximumrepetitivepeakreversevoltageV | RRM |
90 | 100 | V |
| Working peak reverse voltageV | RWM |
90 | 100 | V |
| Maximum DC blocking voltageV | VDC |
90 | 100 | V |
| MaximumaverageforwardrectifiedcurrentTotaldevice at TC= 105°C |
IF(AV) |
10 5 |
A | |
Peak forward surge current 8.3ms single half sine-wave superimposedI |
lFSM |
150 |
A | |
| Peak repetitive reverse current per leg at tp= 2µs, 1KHZ | IRRM |
0.5 |
A | |
| Voltage rate of change (rated VR) | dv/dt | 10,000 |
V/µs | |
| Operating junction and storage temperature range | J, TSTG | 65to+175 |
°C | |
| RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1 second, RH 30% |
VISOL | 4500(1) 3500(2) 1500(3) |
V | |
| Parameter | Symbol | MBR10H150CT | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 150 | V |
| Working peak reverse voltage | VRWM | 150 | V |
| Maximum DC blocking voltage | VDC | 150 | V |
| Maximum average forward rectified current Total device (see fig. 1) Per leg |
IF(AV) | 10 5 |
A |
| Peak forward surge current/ 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg |
IFSM | 160 | A |
| Peak repetitive reverse current per leg at tp = 2s, 1KHZ | IRRM | 1.0 | A |
| Peak non-repetitive reverse surge energy per leg (8/20s waveform) |
ERSM | 10 | mJ |
| Non-repetitive avalanche energy per leg at 25°C, IAS = 1.5A, L=10mH |
EAS | 11.25 | mJ |
| Voltage rate of change (rated VR) | dv/dt | 10,000 | V/s |
| Operating junction and storage temperature range | TJ, TSTG | 65 to +175 | °C |
| RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1 second, RH 30% |
VISOL | 4500 (1) 3500 (2) 1500 (3) |
V |
