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MBRF10H100, MBRF10H100CT, MBRF10H150CT

MBRF10H100, MBRF10H100CT, MBRF10H150CT Selling Leads, Datasheet

MFG:VISHAY  Package Cooled:TO-220  D/C:TO

MBRF10H100, MBRF10H100CT, MBRF10H150CT Picture

MBRF10H100, MBRF10H100CT, MBRF10H150CT Datasheet download

Five Points

Part Number: MBRF10H100

 

MFG: VISHAY

Package Cooled: TO-220

D/C: TO

 

 

 
 
 
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  • MBRF10H100CT

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About MBRF10H100

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Datasheet: MBRF10H100

File Size: 114880 KB

Manufacturer: VISAY [Vishay Siliconix]

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About MBRF10H100CT

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Datasheet: MBRF10H100CT

File Size: 87292 KB

Manufacturer: VISAY [Vishay Siliconix]

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About MBRF10H150CT

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Datasheet: MBRF10H150CT

File Size: 55712 KB

Manufacturer: VISAY [Vishay Siliconix]

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MBRF10H100 General Description

MBR10H90 and MBR10H100 datasheet

MBRF10H100 Maximum Ratings

Maximum Ratings (TC= 25°C unless otherwise noted)
(TC= 25°C unless otherwise noted)Parameter

Symbol MBR10H90 MBR10H100 Unit

Maximum repetitive peak reverse voltage

VRRM 90 100 V

Working peak reverse voltage

VRWM 90 100 V

Maximum DC blocking voltage

VDC 90 100 V

Maximum average forward rectified current

IF(AV) 10 A

Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)

IFSM 250 A
Peak repetitive reverse current at tp= 2µs, 1KHZ

IRRM 0.5 A
Voltage rate of change (rated VR) dv/dt 10,000 V/µs

Operating junction and storage temperature range

TJ, TSTG 65 to +175 °C

RMS Isolation voltage (MBRF type only) from terminals to
heatsink with t = 1 second, RH 30%

VISO L4500(1)
3500(2)
1500(3)
V

MBRF10H100 Features

• Plastic package has Underwriters LaboratoryFlammability Classifications 94V-0
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, freewheeling, and polarity protection applications

MBRF10H100CT Maximum Ratings

Electrical Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol Value
Unit

Maximum instantaneous at IF =5.0A, TJ = 25°C
forward voltage per leg(4)at IF = 5.0A, TJ = 125°C
at IF = 10A, TJ = 25°C

at IF = 10A, TJ = 125°C

VF

0.76

0.61

0.85

0.71

V
Maximum reverse current per legTJ = 25°C
at working peak reverse voltage (Note 4)TJ = 100°C
IR

3.5

4.5

mA
ParameterSymbol ParameterSymbol MBR20H90CT MBR20H100CT Unit
MaximumrepetitivepeakreversevoltageV RRM
90 100 V
Working peak reverse voltageV RWM
90 100 V
Maximum DC blocking voltageV VDC

90 100 V
MaximumaverageforwardrectifiedcurrentTotaldevice
at TC= 105°C

IF(AV)

10

5

A

Peak forward surge current

8.3ms single half sine-wave superimposedI
on rated load (JEDEC Method) per leg

lFSM
150
A
Peak repetitive reverse current per leg at tp= 2µs, 1KHZ IRRM
0.5
A
Voltage rate of change (rated VR) dv/dt
10,000
V/µs
Operating junction and storage temperature range J, TSTG
65to+175
°C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH 30%
VISOL
4500(1)
3500(2)
1500(3)
V

MBRF10H100CT Features

• Plastic package has Underwriters Laboratory Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

MBRF10H150CT General Description

MBR10H150CT, MBRF10H150CT, SB10H150CT-1 datasheet

MBRF10H150CT Maximum Ratings

Parameter Symbol MBR10H150CT Unit
Maximum repetitive peak reverse voltage VRRM 150 V
Working peak reverse voltage VRWM 150 V
Maximum DC blocking voltage VDC 150 V
Maximum average forward rectified current Total device
(see fig. 1) Per leg
IF(AV) 10
5
A
Peak forward surge current/
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM 160 A
Peak repetitive reverse current per leg at tp = 2s, 1KHZ IRRM 1.0 A
Peak non-repetitive reverse surge energy per leg
(8/20s waveform)
ERSM 10 mJ
Non-repetitive avalanche energy per leg
at 25°C, IAS = 1.5A, L=10mH
EAS 11.25 mJ
Voltage rate of change (rated VR) dv/dt 10,000 V/s
Operating junction and storage temperature range TJ, TSTG 65 to +175 °C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH 30%
VISOL 4500 (1)
3500 (2)
1500 (3)
V

MBRF10H150CT Features

• Plastic package has Underwriters Laboratory Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in high frequency inverters, free wheeling, and polarity protection applications

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