MCR2202, MCR22-2, MCR225-10FP Selling Leads, Datasheet
MFG:SHINDENG Package Cooled:SIP D/C:01+
MCR2202, MCR22-2, MCR225-10FP Datasheet download
Part Number: MCR2202
MFG: SHINDENG
Package Cooled: SIP
D/C: 01+
MCR2202, MCR22-2, MCR225-10FP
- Table of contents:
Info of MCR2202
Info of MCR22-2
Info of MCR225-10FP
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About MCR 100- 6
PDF/DataSheet Download
Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
Download : Click here to Download
About MCR22-2
PDF/DataSheet Download
Datasheet: MCR22-2
File Size: 104068 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MCR225-10FP
PDF/DataSheet Download
Datasheet: MCR225-10FP
File Size: 66053 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
MCR22-2 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive Forward and Reverse Blocking Voltage (RGK = IK, TJ = 25 to 125°C) MCR22-2 MCR22-3 MCR22-4 MCR22-6 MCR22-8 |
VDRM VRRM |
50 100 200 400 600 |
Volts |
|
On-State Current RMS (All Conduction Angles) |
IT(RMS) |
1.5 |
A |
|
Peak Non-repetitive Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) |
ITSM |
15 |
A |
|
Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
0.9 |
A2sec |
|
Peak Gate Power, TA = 25°C |
PGM |
0.5 |
Watts |
|
Average Gate Power, TA = 25°C |
PG(AV) |
0.1 |
Watts |
|
Peak Forward Gate Current, TA = 25°C (300 s, 120 PPS) |
IGM |
0.2 |
A |
| Peak Reverse Gate Voltage | VRGM | 5 | Volts |
|
Operating Junction Temperature Range @ Rated VRRM and VDRM |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
| Lead Solder Temperature (Lead Length 1/16" from case, 10 s Max) |
- | +230 |
°C |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.
MCR22-2 Features
• 150 Amperes for 2 ms Safe Area
• High dv/dt
• Very Low Forward "On" Voltage at High Current
• Low-Cost TO-226AA (TO-92)
• High dv/dt
• Very Low Forward "On" Voltage at High Current
• Low-Cost TO-226AA (TO-92)
MCR225-10FP General Description
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered - File #E69369
• Device Marking: Logo, Device Type, e.g., MCR2258FP, Date Code
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered - File #E69369
• Device Marking: Logo, Device Type, e.g., MCR2258FP, Date Code
MCR225-10FP Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR2258FP MCR22510FP |
VDRM VRRM |
600 800 |
Volts |
|
On-State RMS Current (All Conduction Angles) |
IT(RMS) |
25 |
Amps |
|
Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TC = +70°C) |
ITSM |
300 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
375 |
A2sec |
|
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
20 |
Watts |
|
Forward Average Gate Power (TC = +70°C, t = 8.3 ms) |
PG(AV) |
0.5 |
Watts |
|
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C) |
IGM |
2.0 |
Amps |
| RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) |
V(ISO) | 1500 | Volts |
|
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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