MCR25M, MCR25N, MCR25NG Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 D/C:07+
MCR25M, MCR25N, MCR25NG Datasheet download
Part Number: MCR25M
MFG: ON
Package Cooled: TO-220
D/C: 07+
MCR25M, MCR25N, MCR25NG
- Table of contents:
Info of MCR25M
Info of MCR25N
Info of MCR25NG
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About MCR25M
PDF/DataSheet Download
Datasheet: MCR25M
File Size: 198481 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About MCR25N
PDF/DataSheet Download
Datasheet: MCR25N
File Size: 198481 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About MCR 100- 6
PDF/DataSheet Download
Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
Download : Click here to Download
MCR25M Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N |
VDRM VRRM |
400 600 800 |
Volts |
|
On-State RMS Current (180° Conduction Angles; TC = 80°C) |
ITM |
25 |
Amps |
|
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) |
IT(RMS) |
300 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
373 |
Amps |
|
Forward Peak Gate Power (Pulse Width 3 1.0 ms, TC = 80°C) |
PGM |
20 |
Amps |
|
Forward Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
A2s |
|
Forward Peak Gate Current (t 1.0 s, TC = 85°C) |
IGM |
2.0 |
Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
MCR25N Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N |
VDRM VRRM |
400 600 800 |
Volts |
|
On-State RMS Current (180° Conduction Angles; TC = 80°C) |
ITM |
25 |
Amps |
|
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) |
IT(RMS) |
300 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
373 |
Amps |
|
Forward Peak Gate Power (Pulse Width 3 1.0 ms, TC = 80°C) |
PGM |
20 |
Amps |
|
Forward Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
A2s |
|
Forward Peak Gate Current (t 1.0 s, TC = 85°C) |
IGM |
2.0 |
Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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