MCR708AT4, MCR708AT4G, MCR716 Selling Leads, Datasheet
MFG:ON Package Cooled:SOT252 D/C:2004
MCR708AT4, MCR708AT4G, MCR716 Datasheet download
Part Number: MCR708AT4
MFG: ON
Package Cooled: SOT252
D/C: 2004
MCR708AT4, MCR708AT4G, MCR716
- Table of contents:
Info of MCR708AT4
Info of MCR708AT4G
Info of MCR716
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About MCR708AT4
PDF/DataSheet Download
Datasheet: MCR708AT4
File Size: 111389 KB
Manufacturer:
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About MCR 100- 6
PDF/DataSheet Download
Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
Download : Click here to Download
About MCR716
PDF/DataSheet Download
Datasheet: MCR716
File Size: 69696 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
MCR708AT4 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Peak Repetitive OffState Voltage(1) (TC = 40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR704A MCR706A MCR708A |
VDRM VRRM |
100 200 400 600 |
Volts |
| Peak Non-Repetitive OffState Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = 40 to +110°C) MCR703A MCR704A MCR706A MCR708A |
VRSM | 150 250 450 650 |
Volts |
| OnState RMS Current (180° Conduction Angles, TC = 90°C) |
IT(RMS) | 4.0 | Amps |
| Average OnState Current (180° Conduction Angles) TC = 40 to +90°C TC = +100°C |
IT(AV) | 2.6 1.6 |
Amps |
| Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110°C) (1/2 Sine Wave, 1.5 ms, TJ = 110°C) |
ITSM | 25 35 |
Amps |
| Circuit Fusing Consideration (t = 8.3 ms) | I2t | 2.6 | A2s |
| Forward Peak Gate Power (Pulse Width 3 10 s, TC = 90°C) |
PGM | 0.5 | Watt |
| Forward Average Gate Power (t = 8.3 ms, TC = 90°C) |
PG(AV) | 0.1 | Watt |
| Forward Peak Gate Current (Pulse Width 3 10 s, TC = 90°C) |
IGM | 0.2 | Amp |
| Operating Junction Temperature Range | TJ | 40 to +110 | °C |
| Storage Temperature Range | Tstg | 40 to +110 | °C |
MCR716 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR716 MCR718 |
VDRM VRRM |
400 600 |
Volts |
|
On−State RMS Current (180° Conduction Angles; TC = 90°C) |
IT(RMS) |
4.0 |
A |
| Average On−State Current (180° Conduction Angles; TC = 90°C) |
IT(AV) | 2.6 | A |
|
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) |
ITSM |
25 |
A |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
2.6 |
A2sec |
|
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
0.5 |
Watts |
|
Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.1 |
Watts |
|
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C) |
IGM |
0.2 |
A |
|
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
MCR716 Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
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