MCR8N, MCR8NG, MCR8SD Selling Leads, Datasheet
MFG:ON Package Cooled:N/A D/C:03+
MCR8N, MCR8NG, MCR8SD
- Table of contents:
Info of MCR8N
Info of MCR8NG
Info of MCR8SD
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About MCR8N
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Datasheet: MCR8N
File Size: 95881 KB
Manufacturer:
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About MCR 100- 6
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Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
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About MCR8SD
PDF/DataSheet Download
Datasheet: MCR8SD
File Size: 104957 KB
Manufacturer:
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MCR8N Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Peak Repetitive OffState Voltage(1) Peak Repetitive Reverse Voltage (TJ = 40 to 125°C) MCR8D MCR8M MCR8N |
VDRM VRRM |
600 800 |
Volts |
| OnState RMS Current (All Conduction Angles) |
IT(RMS) | 8.0 | A |
| Peak Nonrepetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) |
ITSM | 80 | A |
| Circuit Fusing Consideration (t = 8.3 ms) | I2t | 26.5 | A2sec |
| Peak Gate Power (Pulse Width 1.0 ms, TC = 80°C) | PGM | 5.0 | Watts |
| Average Gate Power (t = 8.3 ms, TC = 80°C) | PG(AV) | 0.5 | Watts |
| Peak Gate Current (Pulse Width 1.0 ms, TC = 80°C) | IGM | 2.0 | A |
| Operating Junction Temperature Range | TJ | 40 to +125 | °C |
| Storage Temperature Range | Tstg | 40 to +125 | °C |
MCR8SD Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 110°C; RGK = 1.0 KW) MCR8SD MCR8SM MCR8SN |
VDRM VRRM |
400 600 800 |
Volts |
|
On-State RMS Current (All Conduction Angles) |
IT(RMS) |
8 |
Amps |
|
Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) |
ITSM |
90 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
34 |
Amps |
|
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
5.0 |
Amps |
|
Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
A2s |
|
Peak Gate Current (Pulse Width 1.0 s, TC = 80°C) |
IGM |
2.0 |
Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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