MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:`06+(pb-free)
MCR8SDG, MCR8SM, MCR8SMG Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: N/A
D/C: `06+(pb-free)
Description: THYRISTOR SCR 8A 400V TO220AB
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PDF/DataSheet Download
Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MCR8SM
File Size: 104957 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MCR 100- 6
File Size: 246036 KB
Manufacturer: 江苏长电
Download : Click here to Download
| Technical/Catalog Information | MCR8SDG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| SCR Type | Sensitive Gate |
| Voltage - Off State | 400V |
| Current - On State (It (RMS) (Max) | 8A |
| Current - On State (It (AV)) (Max) | - |
| Current - Gate Trigger (Igt) (Max) | 200A |
| Current - Hold (Ih) (Max) | 6mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 80A @ 60Hz |
| Voltage - Gate Trigger (Vgt) (Max) | 1V |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MCR8SDG MCR8SDG |
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 110°C; RGK = 1.0 KW) MCR8SD MCR8SM MCR8SN |
VDRM VRRM |
400 600 800 |
Volts |
|
On-State RMS Current (All Conduction Angles) |
IT(RMS) |
8 |
Amps |
|
Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) |
ITSM |
90 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
34 |
Amps |
|
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
5.0 |
Amps |
|
Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
A2s |
|
Peak Gate Current (Pulse Width 1.0 s, TC = 80°C) |
IGM |
2.0 |
Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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