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MDC5000, MDC5001, MDC5001T1

Table of contents:
Info of MDC5000
Info of MDC5001
Info of MDC5001T1

MDC5000, MDC5001, MDC5001T1 Selling Leads, Datasheet

MFG:MOT Package Cooled:N/A D/C:2410

MDC5000, MDC5001, MDC5001T1 Datasheet download

Five Points

Part Number: MDC5000

MFG: MOT

Package Cooled: N/A

D/C: 2410

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MDC5001T1 General Description

This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or NChannel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. The "ENABLE" polarity nulls internal current, Enable current, and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six discrete components.

The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as:
• Cellular Telephones
• Pagers
• PCN/PCS Portables
• GPS Receivers
• PCMCIA RF Modems
• Cordless Phones
• Broadband and Multiband Transceivers and Other Portable Wireless Products.

MDC5001T1 Maximum Ratings

Rating	Symbol	Value	Unit
Power Supply Voltage	V_CC	15	Vdc
Ambient Operating Temperature Range	T_A	40 to +85	°C
Storage Temperature Range	T_stg	65 to +150	°C
Junction Temperature	T_J	150	°C
Collector Emitter Voltage (Q2)	V_CEO	-15	V
Enable Voltage (Pin 5)	V _ENBL	V _CC	V

MDC5001T1 Features

• Maintains Stable Bias Current in NType Discrete Bipolar Junction and INTEGRATED CIRCUIT Field Effect Transistors
• Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components
• Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc
• Reduces Bias Current Variation Due to Temperature and UnittoUnit Parametric Changes
• Consumes <0.5 mW at V _CC = 2.75 V
• Active High Enable is CMOS Compatible

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