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MMBT404, MMBT404A, MMBT4123

Table of contents:
Info of MMBT404
Info of MMBT404A
Info of MMBT4123

MMBT404, MMBT404A, MMBT4123 Selling Leads, Datasheet

MFG:ON Package Cooled:09+(ROHS) D/C:07+(ROHS)

MMBT404, MMBT404A, MMBT4123 Datasheet download

Five Points

Part Number: MMBT404

MFG: ON

Package Cooled: 09+(ROHS)

D/C: 07+(ROHS)

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MMBT404A General Description

The MMBT404A is an PNP silicon epitaxial transistor designed for application in TV tuner, frequency converter, oscillator, mixer and amplifier.

It has dynamic range and good current characteristic.

This chopper transistor in 3-Pin surface-mountable plastic package SOT23 offers superior quality and performance at low cost.

MMBT404A Maximum Ratings

Rating	Symbol	Value	Unit
Collector Emitter Voltage	V_CEO	-35	V
Collector Base Voltage	V_CBO	-40	V
Emitter Base Voltage	V_EBO	-25	V
Collector Current	I_C	-300	W
Total Dissipation	P_tot	200	mW
Junction Temperature	T_JMAX	150
Operating Junction Temperature Range	T_OPR	-60 to +100
Storage Temperature Range	T_STG	-65 to +150

MMBT404A Features

· High collector current
    I_C= -300 mA
· Low saturation voltages
    V_CE(sat)= -0.4 V
    V_BE(sat)= -1.5 V
· High total power dissipation
    P_T= 200 mW
· Excelent hFE linearity

MMBT4123 General Description

MMBT4123 is a kind of general purpose NPN epitaxial silicon transistor.

What comes next is about the maximum ratings. The VCBO (collector-base voltage) is 40 V. The VCEO (collector-emitter voltage) is 30 V. The VEBO (emitter-base voltage) is 5 V. The IC (collector current) is 200 mA. The PC (collector power consumption) is 350 mW. The Tstg (storage temperature) is 150. The Rth(j-a) (thermal resistance junction to ambient) is 357/W.

The following is about the electrical characteristics (Ta=25). The minimum BVCEO (collector-emitter breakdown voltage) is 30 V at IC=1 mA, IE=0. The minimum BVCBO (collector-base breakdown voltage) is 40 V at IC=10 A, IE=0. The minimum BVEBO (emitter-base breakdown voltage) is 5 V at IE=10 A, IC=0. The maximum ICBO (collector cut-off current) is 50 nA at VCB=20 V, IE=0. The maximum IEBO (emitter cut-off current) is 50 nA at VEB=3 V, IC=0. The minimum hFE (DC current gain) is 50 and the maximum is 150 at VCE=1 V, IC=2 mA; The minimum hFE (DC current gain) is 25 at VCE=1 V, IC=50 mA. The maximum VCE(sat) (collector-emitter saturation voltage) is 0.3 V at IC=50 mA, IB=5 mA. The maximum VBE(sat) (base-emitter saturation voltage) is 0.95 V at IC=50 mA, IB=5 mA. The minimum fT (transition frequency) is 250 MHz at VCE=20 V, IC=10 mA, f=100 MHz.

MMBT4123 Maximum Ratings

MMBT4123 Features

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