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MP6401, MP6403, MP6404

Table of contents:
Info of MP6401
Info of MP6403
Info of MP6404

MP6401, MP6403, MP6404 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:ZIP D/C:00+

MP6401, MP6403, MP6404 Datasheet download

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Part Number: MP6401

MFG: TOSHIBA

Package Cooled: ZIP

D/C: 00+

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MP6404 Maximum Ratings

Characteristics		Symbol	Rating		Unit
			Nch	Pch
Drain-source voltage		V_DSS	60	-60	V
Drain-gate voltage (RGS = 20 k)		V_DGR	60	-60	V
Gate-source voltage		V_GSS	±20	±20	V
Drain current	DC	I_D	5	-5	A
	Pulse	I_DP	20	-20
Drain power dissipation (1-device operation, Ta = 25 )		P_D	2.2		W
Drain power dissipation (6-device operation)	Ta = 25	P_DT	4.4		W
	Tc = 25		36
Single pulse avalanche energy (Note 1)		E_AS	129	273	mJ
Avalanche current		I_AR	5	-5	A
Repetitive avalanche energy (Note 2)	1 device operation	E_AR	0.22		mJ
	6 device operation	E_ART	0.44
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55 to 150

Note 1:
Condition for avalanche energy (single pulse) Nch: VDD = 25 V, starting Tch = 25 , L = 7 mH, RG = 25 , IAR = 5 A Pch: VDD = −25 V, starting Tch = 25 , L = 14.84 mH, RG = 25 , IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

MP6404 Typical Application

• 4-V gate drivability
• Small package by full molding (SIP 12 pins)
• High drain power dissipation (6-device operation) : PT = 36 W (Tc = 25 )
• Low drain-source ON resistance: RDS (ON) = 120 m (typ.) (Nch) 160 m (typ.) (Pch)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch)
• Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V) IDSS = 100 A (max) (VDS = 60 V)
• Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25 )

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