MP6710, MP6750, MP6751 Selling Leads, Datasheet
MFG:TOSHIBA D/C:05+
MP6710, MP6750, MP6751
- Table of contents:
Info of MP6710
Info of MP6750
Info of MP6751
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About MP6001
PDF/DataSheet Download
Datasheet: MP6001
File Size: 557859 KB
Manufacturer: MPS
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About MP6750
PDF/DataSheet Download
Datasheet: MP6750
File Size: 195292 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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About MP6751
PDF/DataSheet Download
Datasheet: MP6751
File Size: 251844 KB
Manufacturer: Toshiba
Download : Click here to Download
MP6750 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 15 | A |
| 1 ms | ICP | 30 | A | |
| Forward current | DC | IF | 15 | A |
| 1 ms | IFM | 30 | A | |
| Collector power dissipation (Tc = 25°C) |
PC | 55 | W | |
| Junction temperature | Tj | 150 | °C | |
| Storage temperature range | Tstg | −40 to 125 | °C | |
| Isolation voltage | VIsol | 2500 (AC 1 minute) |
V | |
| Screw torque | 1.5 | N`m | ||
MP6750 Features
·The electrodes are isolated from case.
·6 IGBTs are built into 1 package.
·Enhancement-mode
·Low saturation voltage : VCE (sat) = 4.0V (Max) (IC = 15A)
·High speed : tf = 0.35µs (Max) (IC = 15A) trr = 0.15µs (Max) (IF = 15A)
·6 IGBTs are built into 1 package.
·Enhancement-mode
·Low saturation voltage : VCE (sat) = 4.0V (Max) (IC = 15A)
·High speed : tf = 0.35µs (Max) (IC = 15A) trr = 0.15µs (Max) (IF = 15A)
MP6751 General Description
The MP6751 is a kind of GTR module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications. There are some features as follows: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)high speed: tf=1.0s (max) (IC=15 A); trr=0.15s (max) (IF=15 A); (5)low saturation voltage: VCE(sat)=2.70 V (max) (IC=15 A).
What comes next is about the maximum ratings (Ta=25): (1)collector-emitter voltage, VCES: 600 V; (2)gate-emitter voltage, VGES: ±20 V; (3)collector current, DC, IC: 15 A; (4)collector current, 1 ms, ICP: 30 A; (5)forward current, DC, IF: 15 A; (6)forward current, 1ms, IFM: 30 A; (7)collector power dissipation (Tc=25), PC: 55 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -40 to 125; (10)isolation voltage, VIsol: 2500 V (AC, 1 min).
The following is about the electrical characteristics (Ta=25): (1)gate leakage current, IGES: ±20A max at VGE=±20 V, VCE=0; (2)collector cutoff current, ICES: 1.0 mA max at VCE=600 V, VGE=0; (3)gate-emitter cutoff voltage, VGE(off): 3.0 V min and 6.0 V max at IC=15 mA, VCE=5 V; (4)collector-emitter cutoff voltage, VCE(sat): 2.30 V typ and 2.70 V max at IC=15 A, VGE=15 V; (5)input capacitance, Cies: 1000 pF typ at VCE=10 V, VGE=0, f=1 MHz; (6)forward voltage, VF: 1.7 V typ and 2.5 V max at IF=15 A, VGE=0; (7)reverse recovery time, trr: 0.08s typ and 0.15s max at IF=15 A, VGE=-10 V, di/dt=100 A/s; (8)thermal resistance, Rth(j-c): 2.27/W for transistor stage and 3.09/W for diode stage.
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