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MRF227, MRF229, MRF230

Table of contents:
Info of MRF227
Info of MRF229
Info of MRF230

MRF227, MRF229, MRF230 Selling Leads, Datasheet

MFG:Motorola Package Cooled:CAN D/C:04+

MRF227, MRF229, MRF230 Datasheet download

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Part Number: MRF227

MFG: Motorola

Package Cooled: CAN

D/C: 04+

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MRF227 General Description

The MRF227 is a kind of NPN silicon RF power transistor.It is designed for large-signal amplifier applications to 225 MHz.It is available in TO-39 package.

Then is some information about the maximum ratings.(1): IC is 0.6 A,VCE is 16 V,VCB is 36 V; (2): PDISS is 8 W at TC is 25; (3): TJ is from -65 to 200; (4): TSTG is from -65 to 200; (5): JC is 2.5 /W; (6): the minimum BVCES is 36 V,BVCEO is 16 V and BVEBO is 4.0 V at IC is 50 mA; (7): the maximum ICBO is 15 mA at the condition of VCB is 15 V; (8): the maximum COB is 15 pF at VCB is 12.5 V; (9): the minimum GPE is 13.5 dB,the typical is 15 dB at POUT is 3.0 W and VCE is 12.5 V and f is 225 MHz; (10): is 60 % when POUT is 3.0 W,VCE is 12.5 V and f is 225 MHz.

There is no much information about its electrical characters,if you want more details,please download the datasheet at www.seekic.com and we will updata in time.

MRF230 General Description

The MRF230 is a kind of NPN Silicon RF power transistor.It is designed for 12.5 volt, mid-band large signal amplifier applications in industrial and commercial FM equipment operating in the 40-100MHz range.

There are some information about its features.(1) specified 12.5V,90 MHz characteristics; (2) output power: 1.5 W; (3) minimum gain: 10 dB; (4) efficiency: 55%; (5) 100 % tested for load mismatch at all phase angles with 30:1 VSWR; (6) characterized with parallel equivalent large-signal impedance parameters; (7) characterized with series equivalent large-signal impedance parameters

Then is about maximum ratings.(1): collector-emitter voltage(VCEO) is 18 Vdc; (2): collector-base voltage(VCBO) is 36 Vdc; (3): emitter-base voltage(VEBO) is 4.0 Vdc; (4): collector current continuous(IC) is 0.5 Adc; (5): total device dissipation(PD) is 5.0 W at TA is 25; (6): storage temperature range(Tstg) is from -65 to 200; (7): the maximum thermal resistance,junction to case is 35 /W; (8): the minimum collector-emitter breakdown voltage is 18 Vdc when IC is 25 mAdc and IB is 0; (9): the maximum collector cutoff current is 0.5 nAdc at VCB is 15 Vdc and IE is 0; (10): the minimum emitter-base breakdown voltage is 4.0 Vdc when IE is 0.25 mAdc and IC is 0.

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