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MRF6P3300HR3, MRF6P9220, MRF6P9220HR3

Table of contents:
Info of MRF6P3300HR3
Info of MRF6P9220
Info of MRF6P9220HR3

MRF6P3300HR3, MRF6P9220, MRF6P9220HR3 Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:Discrete Semiconductor Products Package Cooled:375G-04 D/C:NI-860C3

MRF6P3300HR3, MRF6P9220, MRF6P9220HR3 Picture

MRF6P3300HR3, MRF6P9220, MRF6P9220HR3 Datasheet download

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Part Number: MRF6P3300HR3

Category: Discrete Semiconductor Products

MFG: Freescale Semiconductor

Package Cooled: 375G-04

D/C: NI-860C3

Description: MOSFET RF N-CH 28V 47W NI-860C3

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MRF6P3300HR3 Parameters

Technical/Catalog Information	MRF6P3300HR3
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	32V
Current Rating	2.4A
Package / Case	NI-860C3
Packaging	Tape & Reel (TR)
Drawing Number	375; 375G-04 ; HR; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF6P3300HR3 MRF6P3300HR3

MRF6P3300HR3 General Description

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment.

MRF6P3300HR3 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +68	Vdc
Drain-Source Voltage	V_GS	-0.5, +12	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	761 4.3	W W/°C
Storage Temperature Range	T_stg	-65 to +150	°C
Operating Junction Temperature	T_J	200	°C

MRF6P3300HR3 Features

Typical Narrowband Two-Tone Performance @ 860 MHz: V_DD = 32 Volts,I_DQ= 1600 mA, P_out = 270 Watts PEP Power Gain ó 20.2 dB Drain Efficiency ó 44.1% IMD ó -30.8 dBc
Typical Narrowband DVBT OFDM Performance @ 860 MHz: V_DD = 32 Volts, I_DQ = 1600 mA, P_out = 60 Watts Avg., 8K Mode, 64 QAM Power Gain ó 20.4 dB Drain Efficiency ó 29% ACPR @ 3.9 MHz Offset ó -57 dBc @ 20 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 V_DDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

MRF6P9220HR3 Parameters

Technical/Catalog Information	MRF6P9220HR3
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	2.4A
Package / Case	NI-860C3
Packaging	Tape & Reel (TR)
Drawing Number	375; 375G-04 ; HR; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF6P9220HR3 MRF6P9220HR3

MRF6P9220HR3 General Description

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.

MRF6P9220HR3 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +68	Vdc
Drain-Source Voltage	V_GS	-0.5, +12	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	700 4	W W/°C
Storage Temperature Range	T_stg	-65 to +150	°C
Operating Junction Temperature	T_J	200	°C
CW Operation	CW	220	W

MRF6P9220HR3 Features

Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD = 28 Volts,I_DQ = 1600 mA, P_out = 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 20 dB Drain Efficiency ó 30% ACPR @ 750 kHz Offset ó -47.1 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 V_DDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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