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THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz CELLULAR BASE STATION APPLICATIONS.
MS1578 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
28
V
VCEO
Collector-emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
25
A
PDISS
Power Dissipation
300
W
TJ
Junction Temperature
+200
TSTG
Storage Temperature
-65 to +150
MS1578 Features
· GOLD METALLIZATION · DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY · POUT = 150 W PEP · INTERNAL INPUT/OUTPUT MATCHING · COMMON EMITTER CONFIGURATION · 8.0dB GAIN @ 900 MHz · MAX IMD -28dBc @ 150 W PEP · 5:1 VSWR CAPABILITY @ RATED CONDITIONS · 3 dB OVERDRIVE CAPABILITY