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MS21919DG16, MS2207, MS2208

Table of contents:
Info of MS21919DG16
Info of MS2207
Info of MS2208

MS21919DG16, MS2207, MS2208 Selling Leads, Datasheet

MFG:UMPCO Package Cooled:Standard D/C:N/A

MS21919DG16, MS2207, MS2208 Datasheet download

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Part Number: MS21919DG16

MFG: UMPCO

Package Cooled: Standard

D/C: N/A

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MS2207 General Description

The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions.

MS2207 Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation	880	w
I_C	Device Current	24	A
V_CC	Collector Supply Voltage	55	V
T_J	Junction Temperature	200	°C
T_STG	Storage Temperature	- 65 to + 200	°C

MS2207 Features

• 1090 MHz
• 50 VOLTS
• 15:1 VSWR CAPABILITY
• INPUT / OUTPUT MATCHING
• POUT = 400 WATTS
• GP = 8.0 dB MINIMUM
• COMMON BASE CONFIGURATION

MS2207 Connection Diagram

MS2208 General Description

THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES.

MS2208 Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation * (T_C 100)	1360	W
I_C	Device Current *	27	A
V_CC	Collector - Supply Voltage *	55	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	- 65 to + 200

MS2208 Features

· HERMETIC METAL/CERAMIC PACKAGE
· LOW THERMAL RESISTANCE
· 10:1 LOAD VSWR CAPABILITY
· BALLASTED OVERLAY GEOMETRY
· COMMON EMITTER CONFIGURATION

MS2208 Connection Diagram

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