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MS2209, MS2210, MS2212

Table of contents:
Info of MS2209
Info of MS2210
Info of MS2212

MS2209, MS2210, MS2212 Selling Leads, Datasheet

MFG:MSC Package Cooled:SMD D/C:06+

MS2209, MS2210, MS2212 Datasheet download

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Part Number: MS2209

MFG: MSC

Package Cooled: SMD

D/C: 06+

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MS2209 General Description

THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND, HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH WITH MODERATED DUTY CYCLE AND PULSE WIDTH CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN. THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS AND HIGH BURST OR OVERALL DUTY CYCLES.

MS2209 Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation * (T_C 100)	220	W
I_C	Device Current *	7.0	A
V_CC	Collector - Supply Voltage *	50	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	- 65 to + 200

MS2209 Features

· REFRACTORY/GOLD METALIZATION
· LOW THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· EMITTER SITE BALLASTED

MS2209 Connection Diagram

MS2210 General Description

The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship DME/TACAN. The MS2210 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles

This device is capable of withstanding 15:1 VSWR mismatch load conditions at any phase angle under full rated conditions.

MS2210 Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation*	940	w
I_C	Device Current *	24	A
V_CC	Collector Supply Voltage*	50
T_J	Junction Temperature	+200	°C
T_STG	Storage Temperature	- 65 to + 200	°C

MS2210 Features

· 255 MHz BANDWIDTH
· GOLD METALLIZATION
· EMITTER SITE BALLASTED
· Pout = 300W MINIMUM
· Gp = 7.0 dB
· LOW THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· 15:1 VSWR CAPABILITY

MS2210 Connection Diagram

MS2212 General Description

The MS2212 is designed for specialized avionics applications, including JTIDS where power is providedunder pulse formats utilizing short pulse widths and highburst or overall duty cycles.

MS2212 Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation	50	W
I_C	Device Current	1.8	A
V_CC	Collector - Supply Voltage	32	V
T_J	Junction Temperature	250
T_STG	Storage Temperature	-65 to +200

MS2212 Features

` 960 1215 MHz
` 28 VOLTS
` INPUT/OUTPUT MATCHING
` POUT = 15 WATTS
` GP = 8.1 dB MINIMUM
` COMMON BASE CONFIGURATION

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