MS2213, MS2214, MS2215 Selling Leads, Datasheet
MFG:MSC Package Cooled:SMD D/C:0643+
MS2213, MS2214, MS2215 Datasheet download
Part Number: MS2213
MFG: MSC
Package Cooled: SMD
D/C: 0643+
MS2213, MS2214, MS2215
- Table of contents:
Info of MS2213
Info of MS2214
Info of MS2215
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About MS2213
PDF/DataSheet Download
Datasheet: MS2213
File Size: 155975 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About MS2.5
PDF/DataSheet Download
Datasheet: MS2.5
File Size: 58798 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About MS2215
PDF/DataSheet Download
Datasheet: MS2215
File Size: 151025 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
MS2213 General Description
The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.
MS2213 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (TC 85°C) | 75 |
w |
|
IC |
Device Current * |
3.5 |
A |
VCC |
Collector Supply Voltage* | 40 |
V |
|
TJ |
Junction Temperature(Pulsed RF Operation) |
250 |
°C |
|
TSTG |
Storage Temperature |
- 65 to + 200 |
°C |
MS2213 Features
· REFRACTORY/GOLD METALLIZATION
· EMITTER SITE BALLASTED
· 15:1 VSWR CAPABILITY
· LOW RF THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· POUT = 30 W MIN. WITH 7.8 dB Gain
· EMITTER SITE BALLASTED
· 15:1 VSWR CAPABILITY
· LOW RF THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· POUT = 30 W MIN. WITH 7.8 dB Gain
MS2213 Connection Diagram
MS2215 General Description
The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
MS2215 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
PDISS |
Power Dissipation * (TC °C) |
300 |
|
|
IC |
Device Current * |
16.5 |
A |
|
VCC |
Collector - Supply Voltage * |
35 |
V |
|
TJ |
Junction Temperature (Pulsed RF Operation) |
250 |
°C |
|
TSTG |
Storage Temperature * |
- 65 to + 200 |
°C |
MS2215 Features
· REFRACTORY/GOLD METALLIZATION
· EMITTER SITE BALLASTED
· LOW THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· POUT = 150 W MIN. WITH 7.5 dB Gain
MS2215 Connection Diagram
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