MSM5718B70, MSM5718C50, MSM58 Selling Leads, Datasheet
MFG:11000 Package Cooled:OKI D/C:09+
MSM5718B70, MSM5718C50, MSM58 Datasheet download

Part Number: MSM5718B70
MFG: 11000
Package Cooled: OKI
D/C: 09+
MFG:11000 Package Cooled:OKI D/C:09+
MSM5718B70, MSM5718C50, MSM58 Datasheet download

MFG: 11000
Package Cooled: OKI
D/C: 09+
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PDF/DataSheet Download
Datasheet: MSM5718B70
File Size: 266672 KB
Manufacturer: OKI [OKI electronic componets]
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PDF/DataSheet Download
Datasheet: MSM5718C50
File Size: 562809 KB
Manufacturer: OKI [OKI electronic componets]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSM58321
File Size: 131141 KB
Manufacturer: OKI
Download : Click here to Download
The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies. Lower effective latency is attained by operating the dual 2KByte sense amplifiers as high speed caches, and by using random access mode to facilitate large block transfers.
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance is required.
| Symbol | Parameter | Min. | Max. | Unit |
| VI,ABS | Voltage applied to any RSL pin with respect to Gnd | 0.5 | VDD,MAX+0.5 | V |
| VI,TTL,ABS | Voltage applied to any TTL pin with respect to Gnd | 0.5 | VDD+0.5 | V |
| VDD,ABS | Voltage on VDD with respect to Gnd | 0.5 | VDD,MAX+1.0 | V |
| TJ,ABS | Junction temperature under bias | -55 | 125 | |
| TSTORE | Storage temperature | -55 | 125 |

The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.
|
Symbol |
Parameter |
Min. |
Max. |
Unit |
|
V I,ABS |
Voltage applied to any RSL pin with respect to Gnd |
0.3 |
V DD,MAX+0.3 |
V |
|
V I,CMOS,ABS |
Voltage applied to any CMOS pin with respect to Gnd |
0.3 |
V DD+0.3 |
V |
|
V DD,ABS |
Voltage on VDD with respect to Gnd |
0.3 |
VDD,MAX+1.0 |
V |
|
T J,ABS |
Junction temperature under bias |
55 |
125 |
°C |
|
T STORE |
Storage temperature |
55 |
125 |
°C |

