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MSM5718B70, MSM5718C50, MSM58

MSM5718B70, MSM5718C50, MSM58 Selling Leads, Datasheet

MFG:11000  Package Cooled:OKI  D/C:09+

MSM5718B70, MSM5718C50, MSM58 Picture

MSM5718B70, MSM5718C50, MSM58 Datasheet download

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Part Number: MSM5718B70

 

MFG: 11000

Package Cooled: OKI

D/C: 09+

 

 

 
 
 
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About MSM5718B70

PDF/DataSheet Download

Datasheet: MSM5718B70

File Size: 266672 KB

Manufacturer: OKI [OKI electronic componets]

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MSM5718C50 Suppliers

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About MSM5718C50

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Datasheet: MSM5718C50

File Size: 562809 KB

Manufacturer: OKI [OKI electronic componets]

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MSM58 Suppliers

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  • MSM5832

  • Pack: DIP D/C: 02+& Qty: DIP-21  Adddate: 2026-07-28
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  • sihaiguoban   Hong
    Contact: Ms.sunqiaoiao   MSN:sunqiaoqiao88@126.com
    Tel: 86-0755-61392161
    Fax: 86-0755--61392055
    (10)
  • MSM5832

  • Vendor: OKI Qty: 60 Note: OUR OWN STOCK  Adddate: 2026-07-28
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  • JLH TECHNOLOGY CO.   China
    Contact: Mr.SAM LEE   MSN:lesson1992@hotmail.com
    Tel: 86-755-83740160-806
    Fax: 86-755-83740857
    (10)
  • MSM5832

  • Vendor: OKI D/C: 03+& Qty: 5000  Adddate: 2026-07-28
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  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • MSM58321RS

  • Vendor: OKI Pack: DIP D/C: 10+& Qty: 10000 Note: our new and original stock in China  Adddate: 2026-07-28
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  • shanghhai xinshen   China
    Contact: Mr.Mrliu   MSN:ldstar8@msn.com
    Tel: 0086-0755-18955684138
    Fax: 0086-0755-22142437
    (22)
  • MSM5832RG

  • Pack: DIP D/C: 05+& Qty: DIP-21  Adddate: 2026-07-28
  • Inquire Now
  • sihaiguoban   Hong
    Contact: Ms.sunqiaoiao   MSN:sunqiaoqiao88@126.com
    Tel: 86-0755-61392161
    Fax: 86-0755--61392055
    (10)

About MSM58321

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Datasheet: MSM58321

File Size: 131141 KB

Manufacturer: OKI

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MSM5718B70 General Description

The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies. Lower effective latency is attained by operating the dual 2KByte sense amplifiers as high speed caches, and by using random access mode to facilitate large block transfers.

RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance is required.

MSM5718B70 Maximum Ratings

Symbol Parameter Min. Max. Unit
VI,ABS Voltage applied to any RSL pin with respect to Gnd 0.5 VDD,MAX+0.5 V
VI,TTL,ABS Voltage applied to any TTL pin with respect to Gnd 0.5 VDD+0.5 V
VDD,ABS Voltage on VDD with respect to Gnd 0.5 VDD,MAX+1.0 V
TJ,ABS Junction temperature under bias -55 125
TSTORE Storage temperature -55 125

MSM5718B70 Features

• Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protocol for fast block-oriented transfers Direct connection to Rambus ASICs, MPUs, and Peripherals 15 active signals require just 32 total pins on the controller interface (including power) 3.3 V operation Additional/multiple Rambus Channels provide an additional 500 MB/second band-width each
• Dual 2KByte sense amplifiers may be operated as caches for low latency access
• Random Access mode enables any burst order at full band width
• Features for graphics include random-access mode, write-per-bit and mask-per-bit operations
• Control and refresh logic entirely self-contained
• On-chip registers for flexible addressing and timing
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)

MSM5718B70 Connection Diagram

MSM5718C50 General Description

The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.

RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.

MSM5718C50 Maximum Ratings

Symbol
Parameter
Min.
Max.
Unit
V I,ABS
Voltage applied to any RSL pin with respect to Gnd
0.3
V DD,MAX+0.3
V
V I,CMOS,ABS
Voltage applied to any CMOS pin with respect to Gnd
0.3
V DD+0.3
V
V DD,ABS
Voltage on VDD with respect to Gnd
0.3
VDD,MAX+1.0
V
T J,ABS
Junction temperature under bias
55
125
°C
T STORE
Storage temperature
55
125
°C

MSM5718C50 Features

• Compatible with Base RDRAMs
• 600 MB/s peak transfer rate per RDRAM
• Rambus Signaling Level (RSL) interface
• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
• 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
• 13 active signals require just 32 total pins on the controller interface (including power)
• 3.3 V operation
• Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
• Two or four 2KByte sense amplifiers may be operated as caches for low latency access
• Random access mode enables any burst order at full bandwidth within a page
• Graphics features include write-per-bit and mask-per-bit operations
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)

MSM5718C50 Connection Diagram

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