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MTD5P06V, MTD5P06V1, MTD5P06VT4

Table of contents:
Info of MTD5P06V
Info of MTD5P06V1
Info of MTD5P06VT4

MTD5P06V, MTD5P06V1, MTD5P06VT4 Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:on D/C:dc01

MTD5P06V, MTD5P06V1, MTD5P06VT4 Datasheet download

Five Points

Part Number: MTD5P06VT4

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: on

D/C: dc01

Description: MOSFET P-CH 60V 5A DPAK

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MTD5P06V General Description

TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD5P06V Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	60	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	60	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (t_p 10 ms)	V_GS V_GSM	± 15 ± 25	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	5 4 18	Adc Apk
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ T_A = 25°C (1)	P_D	40 0.27 2.1	Watts W/°C Watts
Operating and Storage Temperature Range	T_J, T_stg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy - STARTING T_J = 25°C (V_DD = 25 Vdc, V_GS = 10 Vdc, PEAK I_L = 5 Apk, L = 10 mH, R_G = 25)	E_AS	125	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1)	R_JC R_JA R_JA	3.75 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.

MTD5P06V Features

• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

MTD5P06VT4 Parameters

Technical/Catalog Information	MTD5P06VT4
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	450 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	510pF @ 25V
Power - Max	40W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTD5P06VT4 MTD5P06VT4 MTD5P06VT4OSDKR ND MTD5P06VT4OSDKRND MTD5P06VT4OSDKR

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